Influence of Ti on CoSi2 nucleation

Evidence is presented that impurities present in the precursor phase may influence the nucleation of a new phase. In case of the CoSi→CoSi2 transition, it is found that the presence of small amounts of Ti (originating from either a Ti capping layer or interlayer) causes an increase in the CoSi2 nucl...

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Bibliographic Details
Published in:Applied physics letters 2000-11, Vol.77 (20), p.3170-3172
Main Authors: Detavernier, C., Van Meirhaeghe, R. L., Cardon, F., Maex, K., Vandervorst, W., Brijs, B.
Format: Article
Language:English
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Summary:Evidence is presented that impurities present in the precursor phase may influence the nucleation of a new phase. In case of the CoSi→CoSi2 transition, it is found that the presence of small amounts of Ti (originating from either a Ti capping layer or interlayer) causes an increase in the CoSi2 nucleation temperature. Moreover, for an increasing amount of Ti, we observed a transition from polycrystalline CoSi2 over preferential (220) orientation towards epitaxial (400) CoSi2. The model that we propose entails a new point of view on the mechanism of Ti interlayer mediated epitaxy.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1325401