Nonlinear electrical transport in nc-Si/CaF2 multilayer structures with ultrathin CaF2 layers

We present a study of the electrical transport in (Si/CaF2)n superlattices with n=100 and with Si, CaF2 thickness in each period in the range of 1.2–1.6 nm (Si) and below 1 nm (CaF2), respectively. The results suggest that at gate voltages higher than ±4 V a Poole–Frenkel-type mechanism accounts for...

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Bibliographic Details
Published in:Journal of applied physics 2001-01, Vol.89 (1), p.610-614
Main Authors: Ioannou-Sougleridis, V., Ouisse, T., Nassiopoulou, A. G., Bassani, F., Arnaud d’Avitaya, F.
Format: Article
Language:English
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Summary:We present a study of the electrical transport in (Si/CaF2)n superlattices with n=100 and with Si, CaF2 thickness in each period in the range of 1.2–1.6 nm (Si) and below 1 nm (CaF2), respectively. The results suggest that at gate voltages higher than ±4 V a Poole–Frenkel-type mechanism accounts for the observed electric-field-assisted conduction through the layers.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.1330551