Effects of Si-doping in the barriers on the recombination dynamics in In0.15Ga0.85N/In0.015Ga0.985N quantum wells

A systematic study of time-resolved photoluminescence spectra from In0.15Ga0.85N/In0.015Ga0.985N quantum wells (QWs) with different Si-doping concentration in the barriers has been carried out. The 10 K recombination lifetimes in the QWs depend strongly on the Si-doping in the barriers, decreasing f...

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Bibliographic Details
Published in:Journal of applied physics 2001-01, Vol.89 (1), p.634-637
Main Authors: Ryu, Mee-Yi, Yu, Phil Won, Shin, Eun-joo, Lee, Joo In, Yu, Sung Kyu, Oh, Eunsoon, Nam, Ok Hyun, Sone, Chul Soo, Park, Yong Jo
Format: Article
Language:English
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Summary:A systematic study of time-resolved photoluminescence spectra from In0.15Ga0.85N/In0.015Ga0.985N quantum wells (QWs) with different Si-doping concentration in the barriers has been carried out. The 10 K recombination lifetimes in the QWs depend strongly on the Si-doping in the barriers, decreasing from ∼80 to ∼20 ns as the Si-doping level increases from 2×1018 to 1×1019 cm−3. The separation between the spontaneous and stimulated emission (SE) peaks and a shift of the emission peak to longer wavelengths with delay time after a pulsed excitation decrease with increasing Si doping. The increased recombination rate, the decrease of peak shift with delay time, and the reduced separation between the spontaneous and SE peaks with increasing Si doping are attributed to the screening of piezoelectric field by carriers originated from Si-doped barriers.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.1331077