Reduction in leakage current density of Si-based metal–oxide–semiconductor structure by use of catalytic activity of a platinum overlayer

We have developed a method to reduce leakage current density through a SiO2 layer of Si-based metal–oxide–semiconductor structure. In this method, a ∼3-nm-thick platinum (Pt) layer is deposited on the SiO2 layer, followed by the heat treatment at 300 °C in oxygen. After the removal of the Pt layer,...

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Published in:Applied physics letters 2000-12, Vol.77 (24), p.4031-4033
Main Authors: Yuasa, Toshiro, Asuha, Yoneda, Kenji, Todokoro, Yoshihiro, Kobayashi, Hikaru
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Language:English
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cited_by cdi_FETCH-LOGICAL-c227t-97bf4362becfb8089536a692ba424db96cb946cb05226e5c50427c9b36929e5b3
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container_end_page 4033
container_issue 24
container_start_page 4031
container_title Applied physics letters
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creator Yuasa, Toshiro
Asuha
Yoneda, Kenji
Todokoro, Yoshihiro
Kobayashi, Hikaru
description We have developed a method to reduce leakage current density through a SiO2 layer of Si-based metal–oxide–semiconductor structure. In this method, a ∼3-nm-thick platinum (Pt) layer is deposited on the SiO2 layer, followed by the heat treatment at 300 °C in oxygen. After the removal of the Pt layer, the density of leakage current for this structure is decreased to less than 1/1000 with no increase in the thickness of the SiO2 layer. The reduction in leakage current density is attributed to (i) a decrease in the density of defect states such as Si dangling bonds and suboxide species, and (ii) improvement of the uniformity of the oxide thickness, both of which are caused by dissociated oxygen ions injected from Pt to SiO2.
doi_str_mv 10.1063/1.1331079
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title Reduction in leakage current density of Si-based metal–oxide–semiconductor structure by use of catalytic activity of a platinum overlayer
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