Optical characterization of wide band gap amorphous semiconductors (a-Si:C:H): Effect of hydrogen dilution

• Published in: Journal of applied physics 2001-01, Vol.89 (2), p.1130-1137
• Main Authors: Park, Minseo, Teng, C. W., Sakhrani, V., McLaurin, M. B., Kolbas, R. M., Sanwald, R. C., Nemanich, R. J., Hren, J. J., Cuomo, J. J.
• Format: Article
• Language: English
• ISSN: 0021-8979; 1089-7550
• DOI: 10.1063/1.1332421

The effect of hydrogen dilution on the optical properties of a wide band gap amorphous semiconductor (a-Si:C:H) was investigated. The samples were prepared by glow discharge decomposition of tetramethylsilane and were characterized primarily by optical techniques: spectroscopic ellipsometry, Raman scattering, infrared absorption, spectrophotometry, and UV photoluminescence. The deposition rate decreased with hydrogen dilution, while the silicon to carbon ratio remained constant with the addition of hydrogen. The optical band gap of this material increased as the hydrogen flow rate increased. Infrared absorption studies show that the concentration of hydrogen which is bonded to carbon decreases systematically upon hydrogen dilution. Hydrogen dilution appears to reduce the size and concentration of sp2 bonded carbon clusters, possibly caused by the etching of sp2 clusters by atomic hydrogen. The result was also supported by the shift of the Raman G peak position to a lower wave number region. Room temperature photoluminescence in the visible spectrum was observed with UV excitation.