Heterogeneity in microcrystalline-transition state: Origin of Si-nucleation and microcrystallization at higher rf power from Ar-diluted SiH4 plasma

Using very high Ar-dilution to the SiH4 plasma, good quality amorphous Si:H films could be obtained at very low rf power. The a-Si:H film, prepared at a very low deposition rate of ∼10 Å/min, exhibited a σPh∼1×10−4 S cm−1, σPh/σD∼105, a notably wide optical gap of 2.10 eV and a very good stability a...

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Bibliographic Details
Published in:Journal of applied physics 2001-03, Vol.89 (5), p.3041-3048
Main Authors: Das, Debajyoti, Jana, Madhusudan, Barua, A. K.
Format: Article
Language:English
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Summary:Using very high Ar-dilution to the SiH4 plasma, good quality amorphous Si:H films could be obtained at very low rf power. The a-Si:H film, prepared at a very low deposition rate of ∼10 Å/min, exhibited a σPh∼1×10−4 S cm−1, σPh/σD∼105, a notably wide optical gap of 2.10 eV and a very good stability against thermal annealing effects with reasonable light induced degradation. At higher rf power undoped μc-Si:H films were prepared with a high σD∼1×10−4 S cm−1, at a deposition rate of 30 Å/min from
ISSN:0021-8979
1089-7550
DOI:10.1063/1.1345852