High mobility in n -type GaN substrates

High peak electron mobilities were observed in freestanding c-plane GaN layers. Two well-defined electrical layers, a low mobility degenerate interface layer, and a high mobility nondegenerate bulk layer, were present in these samples. The carrier concentrations and mobilities for the layers were ex...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2001-03, Vol.78 (13), p.1873-1875
Main Authors: Saxler, A., Look, D. C., Elhamri, S., Sizelove, J., Mitchel, W. C., Sung, C. M., Park, S. S., Lee, K. Y.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:High peak electron mobilities were observed in freestanding c-plane GaN layers. Two well-defined electrical layers, a low mobility degenerate interface layer, and a high mobility nondegenerate bulk layer, were present in these samples. The carrier concentrations and mobilities for the layers were extracted using two methods: (1) magnetic field dependent Hall effect analysis; and (2) a simple two layer Hall model with the assumption that one of the layers is degenerate. The electron Hall mobility of the bulk layer is found to peak at nearly 8000 cm2/V s at low temperature using the magnetic field dependent Hall effect analysis.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1348304