Electrochemical carbon nanotube field-effect transistor

We explore the electric-field effect of carbon nanotubes (NTs) in electrolytes. Due to the large gate capacitance, Fermi energy (EF) shifts of order ±1 V can be induced, enabling to tune NTs from p to n-type. Consequently, large resistance changes are measured. At zero gate voltage, the NTs are hole...

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Published in:Applied physics letters 2001-02, Vol.78 (9), p.1291-1293
Main Authors: Krüger, M., Buitelaar, M. R., Nussbaumer, T., Schönenberger, C., Forró, L.
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Language:English
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description We explore the electric-field effect of carbon nanotubes (NTs) in electrolytes. Due to the large gate capacitance, Fermi energy (EF) shifts of order ±1 V can be induced, enabling to tune NTs from p to n-type. Consequently, large resistance changes are measured. At zero gate voltage, the NTs are hole-doped in air with |EF|≈0.3–0.5 eV, corresponding to a doping level of ≈1013 cm−2. Hole-doping increases in the electrolyte.
doi_str_mv 10.1063/1.1350427
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title Electrochemical carbon nanotube field-effect transistor
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