Transparent conducting Zr-doped In2O3 thin films for organic light-emitting diodes

• Published in: Applied physics letters 2001-02, Vol.78 (8), p.1050-1052
• Main Authors: Kim, H., Horwitz, J. S., Kushto, G. P., Qadri, S. B., Kafafi, Z. H., Chrisey, D. B.
• Format: Article
• Language: English
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.1350595

Zirconium-doped indium oxide (ZIO) thin films (∼2000 Å thick) have been deposited by pulsed-laser deposition on glass substrates without a postdeposition anneal. The structural, electrical and optical properties of these films have been investigated as a function of substrate temperature and oxygen partial pressure during deposition. Films were deposited at substrate temperatures ranging from 25 °C to 400 °C in O2 partial pressures ranging from 0.1 to 50 mTorr. The films (∼2000 Å thick) deposited at 200 °C in 25 mTorr of oxygen show electrical resistivities as low as 2.5×10−4 Ω cm, an average visible transmittance of 89%, and an optical band gap of 4.1 eV. The ZIO films were used as a transparent anode contact in organic light emitting diodes and the device performance was studied. The external quantum efficiency measured from these devices was about 0.9% at a current density of 100 A/m2.