Temperature dependence of electric-field induced photoluminescence from an InGaN-based light-emitting diode

Temperature dependence of reverse-biased photoluminescence has been investigated for understanding the radiative recombination mechanism in an InGaN single-quantum-well light-emitting diode. It is found that the applied-voltage dependence of luminescence intensities is strongly affected by temperatu...

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Published in:Journal of applied physics 2001-05, Vol.89 (10), p.5779-5781
Main Authors: Kudo, Hiromitsu, Tanabe, Tomoyuki, Ishibashi, Hiroki, Zheng, Ruisheng, Yamada, Yoichi, Taguchi, Tsunemasa
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description Temperature dependence of reverse-biased photoluminescence has been investigated for understanding the radiative recombination mechanism in an InGaN single-quantum-well light-emitting diode. It is found that the applied-voltage dependence of luminescence intensities is strongly affected by temperature from 17 to 100 K, and a dramatic decrease in the luminescence intensity is observed over 100 K. The model of a field ionization of excitons cannot explain this dramatic decrease in the luminescence intensity. It is therefore suggested that the free-carrier recombination process becomes dominant over 100 K. Two emission components are found on the condition of reverse bias. The lower-energy component becomes strongly dependent on reverse-bias voltage with increasing temperature, and fully disappears under the applied voltage of only −2 V at 100 K.
doi_str_mv 10.1063/1.1350621
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title Temperature dependence of electric-field induced photoluminescence from an InGaN-based light-emitting diode
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