Normal incidence InAs/AlxGa1−xAs quantum dot infrared photodetectors with undoped active region

We have performed a comprehensive investigation of n-type quantum dot infrared photodetectors (QDIPs) based on InAs/GaAs epitaxical island quantum dots (QDs) grown via the innovative punctuated island growth technique. The structural properties of the QDs were investigated with cross-sectional trans...

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Published in:Journal of applied physics 2001-04, Vol.89 (8), p.4558-4563
Main Authors: Chen, Zhonghui, Baklenov, O., Kim, E. T., Mukhametzhanov, I., Tie, J., Madhukar, A., Ye, Z., Campbell, J. C.
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cited_by cdi_FETCH-LOGICAL-c227t-4350780082b99dfae7e6f0f8576c20939c59e567f6e5dac3105461191ab0f04e3
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container_issue 8
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container_title Journal of applied physics
container_volume 89
creator Chen, Zhonghui
Baklenov, O.
Kim, E. T.
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Tie, J.
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Campbell, J. C.
description We have performed a comprehensive investigation of n-type quantum dot infrared photodetectors (QDIPs) based on InAs/GaAs epitaxical island quantum dots (QDs) grown via the innovative punctuated island growth technique. The structural properties of the QDs were investigated with cross-sectional transmission electron microscopy and atomic force microscopy. The electronic properties of the QDs inserted in QDIP devices were investigated with photoluminescence (PL), PL excitation, and intra- and inter-band photocurrent spectroscopy. The influence of AlGaAs layers inserted into the QDIP active regions on the performance of dark current and inter- and intra-band photocurrent was examined. Initial results on intra-band responsivity and detectivity of these QDIPs at 77 K with undoped active region show promise for application.
doi_str_mv 10.1063/1.1356430
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title Normal incidence InAs/AlxGa1−xAs quantum dot infrared photodetectors with undoped active region
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