High-performance InAs/GaSb superlattice photodiodes for the very long wavelength infrared range

We report on the demonstration of high-performance p-i-n photodiodes based on type-II InAs/GaSb superlattices with 50% cut-off wavelength λc=16 μm operating at 80 K. Material is grown by molecular beam epitaxy on GaSb substrates with excellent crystal quality as evidenced by x-ray diffraction and at...

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Bibliographic Details
Published in:Applied physics letters 2001-04, Vol.78 (15), p.2107-2109
Main Authors: Mohseni, H., Razeghi, M., Brown, G. J., Park, Y. S.
Format: Article
Language:English
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Summary:We report on the demonstration of high-performance p-i-n photodiodes based on type-II InAs/GaSb superlattices with 50% cut-off wavelength λc=16 μm operating at 80 K. Material is grown by molecular beam epitaxy on GaSb substrates with excellent crystal quality as evidenced by x-ray diffraction and atomic force microscopy. The processed devices show a current responsivity of 3.5 A/W at 80 K leading to a detectivity of ∼1.51×1010 cmHz1/2/W. The quantum efficiency of these devices is about 35% which is comparable to HgCdTe detectors with a similar active layer thickness.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1362179