Observation of negative differential resistance of a trench-type narrow InGaAs quantum-wire field-effect transistor on a (311)A InP substrate

A trench-type narrow InGaAs quantum-wire field-effect transistor (QWR–FET) with a cross section of 8×25 nm has been fabricated on a (311)A InP V-grooved substrate by molecular-beam epitaxy. The trench-type InGaAs QWR–FET has normal static characteristics at room temperature, and demonstrates clear n...

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Bibliographic Details
Published in:Applied physics letters 2001-04, Vol.78 (16), p.2369-2371
Main Authors: Sugaya, Takeyoshi, Ogura, Mutsuo, Sugiyama, Yoshinobu, Matsumoto, Kazuyuki, Yonei, Kenji, Jang, Kee-Youn
Format: Article
Language:English
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Summary:A trench-type narrow InGaAs quantum-wire field-effect transistor (QWR–FET) with a cross section of 8×25 nm has been fabricated on a (311)A InP V-grooved substrate by molecular-beam epitaxy. The trench-type InGaAs QWR–FET has normal static characteristics at room temperature, and demonstrates clear negative differential resistance characteristics at 40 K with a high peak-to-valley current ratio (PVR=4.3) and a low onset voltage of 0.12 V.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1365947