Electron affinity of AlxGa1−xN(0001) surfaces

The electronic properties and the electron affinities of AlxGa1−xN(0001) surfaces were investigated by ultraviolet photoemission spectroscopy (UPS) over the whole composition range. The samples were prepared by N-ion sputtering and annealing. Surface cleanliness and stoichiometry were monitored with...

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Bibliographic Details
Published in:Applied physics letters 2001-04, Vol.78 (17), p.2503-2505
Main Authors: Grabowski, S. P., Schneider, M., Nienhaus, H., Mönch, W., Dimitrov, R., Ambacher, O., Stutzmann, M.
Format: Article
Language:English
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Summary:The electronic properties and the electron affinities of AlxGa1−xN(0001) surfaces were investigated by ultraviolet photoemission spectroscopy (UPS) over the whole composition range. The samples were prepared by N-ion sputtering and annealing. Surface cleanliness and stoichiometry were monitored with x-ray photoemission spectroscopy. Samples with high aluminum content showed traces of oxygen which could not be removed by further cleaning cycles. However, we have evidence that the oxygen is located in the bulk and not at the surface. From the UP spectra the ionization energies and electron affinities as a function of composition x were determined. A decrease in electron affinity with increasing aluminum content was found, but the electron affinity remains positive for all x. Thus, earlier predictions of negative electron affinity for high aluminum content were not confirmed.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1367275