Stability of zirconium silicate films on Si under vacuum and O2 annealing

The effect of postdeposition annealing in vacuum and in dry O2 on the atomic transport and chemical stability of chemical vapor deposited ZrSixOy films on Si is investigated. Rutherford backscattering spectrometry, narrow nuclear resonance profiling, and low energy ion scattering spectroscopy were u...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2001-04, Vol.78 (17), p.2446-2448
Main Authors: Morais, J., da Rosa, E. B. O., Miotti, L., Pezzi, R. P., Baumvol, I. J. R., Rotondaro, A. L. P., Bevan, M. J., Colombo, L.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The effect of postdeposition annealing in vacuum and in dry O2 on the atomic transport and chemical stability of chemical vapor deposited ZrSixOy films on Si is investigated. Rutherford backscattering spectrometry, narrow nuclear resonance profiling, and low energy ion scattering spectroscopy were used to obtain depth distributions of Si, O, and Zr in the films. The chemical environment of these elements in near-surface and near-interface regions was identified by angle-resolved x-ray photoelectron spectroscopy. It is shown that although the interface region is rather stable, the surface region presents an accumulation of Si after thermal annealing.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1367288