Charge transfer of carriers by interband photoexcitation in asymmetric GaAs/AlGaAs coupled quantum wells

The influence of interband photoexcitation intensity on the photoluminescence line shape was investigated in GaAs/AlGaAs modulation-doped asymmetric structure composed of a wide quantum well weakly coupled to a narrow quantum well. The emission spectra show a broadening and a narrowing of the linewi...

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Bibliographic Details
Published in:Applied physics letters 2001-05, Vol.78 (19), p.2879-2881
Main Authors: Levy, M., Khait, Yu. L., Beserman, R., Sa’ar, A., Thierry-Mieg, V., Planel, R.
Format: Article
Language:English
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Summary:The influence of interband photoexcitation intensity on the photoluminescence line shape was investigated in GaAs/AlGaAs modulation-doped asymmetric structure composed of a wide quantum well weakly coupled to a narrow quantum well. The emission spectra show a broadening and a narrowing of the linewidths from the wide quantum well and from the narrow quantum well, respectively, with increasing laser power. In addition, we observe a fast increase of the emission intensity from the narrow quantum well with respect to that from the wide quantum well. These processes are shown to be the result of carrier transfer into the narrow quantum well. We propose a charge transfer model to explain semiquantitatively our results.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1369413