Indication of ferromagnetism in molecular-beam-epitaxy-derived N-type GaMnN

Growth by molecular-beam epitaxy of the dilute magnetic alloy GaMnN is reported. The GaMnN contains 7.0% Mn as determined by Auger electron spectroscopy, and is single phase as determined by x-ray diffraction and reflection high-energy electron diffraction. Both magnetic and magnetotransport data ar...

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Bibliographic Details
Published in:Applied physics letters 2001-08, Vol.79 (9), p.1312-1314
Main Authors: Overberg, Mark E., Abernathy, Cammy R., Pearton, Stephen J., Theodoropoulou, Nikoleta A., McCarthy, Kevin T., Hebard, Arthur F.
Format: Article
Language:English
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Summary:Growth by molecular-beam epitaxy of the dilute magnetic alloy GaMnN is reported. The GaMnN contains 7.0% Mn as determined by Auger electron spectroscopy, and is single phase as determined by x-ray diffraction and reflection high-energy electron diffraction. Both magnetic and magnetotransport data are reported. The results show the anomalous Hall effect, negative magnetoresistance, and magnetic hysteresis at 10 K, indicating that Mn is incorporating into the GaN and forming the ferromagnetic semiconductor GaMnN. At 25 K the anomalous Hall term vanishes, indicating a Curie temperature between 10 and 25 K.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1397763