Indication of ferromagnetism in molecular-beam-epitaxy-derived N-type GaMnN

Growth by molecular-beam epitaxy of the dilute magnetic alloy GaMnN is reported. The GaMnN contains 7.0% Mn as determined by Auger electron spectroscopy, and is single phase as determined by x-ray diffraction and reflection high-energy electron diffraction. Both magnetic and magnetotransport data ar...

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Published in:Applied physics letters 2001-08, Vol.79 (9), p.1312-1314
Main Authors: Overberg, Mark E., Abernathy, Cammy R., Pearton, Stephen J., Theodoropoulou, Nikoleta A., McCarthy, Kevin T., Hebard, Arthur F.
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cited_by cdi_FETCH-LOGICAL-c328t-e45f49b9a1aeab0cd5689629f3cf26c45cfb285a288c1ac6afcc453eafd8a97b3
cites cdi_FETCH-LOGICAL-c328t-e45f49b9a1aeab0cd5689629f3cf26c45cfb285a288c1ac6afcc453eafd8a97b3
container_end_page 1314
container_issue 9
container_start_page 1312
container_title Applied physics letters
container_volume 79
creator Overberg, Mark E.
Abernathy, Cammy R.
Pearton, Stephen J.
Theodoropoulou, Nikoleta A.
McCarthy, Kevin T.
Hebard, Arthur F.
description Growth by molecular-beam epitaxy of the dilute magnetic alloy GaMnN is reported. The GaMnN contains 7.0% Mn as determined by Auger electron spectroscopy, and is single phase as determined by x-ray diffraction and reflection high-energy electron diffraction. Both magnetic and magnetotransport data are reported. The results show the anomalous Hall effect, negative magnetoresistance, and magnetic hysteresis at 10 K, indicating that Mn is incorporating into the GaN and forming the ferromagnetic semiconductor GaMnN. At 25 K the anomalous Hall term vanishes, indicating a Curie temperature between 10 and 25 K.
doi_str_mv 10.1063/1.1397763
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fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_1397763</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_1397763</sourcerecordid><originalsourceid>FETCH-LOGICAL-c328t-e45f49b9a1aeab0cd5689629f3cf26c45cfb285a288c1ac6afcc453eafd8a97b3</originalsourceid><addsrcrecordid>eNotkL1OwzAYRS0EEqUw8AZeGVz8Ezv2iCpoK0pZYI6-OJ-RUf5kB0TeniI6Hd0z3OEQciv4SnCj7sVKKFeWRp2RheBlyZQQ9pwsOOeKGafFJbnK-fM4tVRqQZ53fRM9THHo6RBowJSGDj56nGLuaOxpN7Tov1pIrEboGI5xgp-ZNZjiNzb0wKZ5RLqBl_5wTS4CtBlvTlyS96fHt_WW7V83u_XDnnkl7cSw0KFwtQMBCDX3jTbWGemC8kEaX2gfamk1SGu9AG8g-KNUCKGx4MpaLcnd_69PQ84JQzWm2EGaK8GrvwqVqE4V1C9Ur1BM</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Indication of ferromagnetism in molecular-beam-epitaxy-derived N-type GaMnN</title><source>American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)</source><source>AIP_美国物理联合会现刊（与NSTL共建）</source><creator>Overberg, Mark E. ; Abernathy, Cammy R. ; Pearton, Stephen J. ; Theodoropoulou, Nikoleta A. ; McCarthy, Kevin T. ; Hebard, Arthur F.</creator><creatorcontrib>Overberg, Mark E. ; Abernathy, Cammy R. ; Pearton, Stephen J. ; Theodoropoulou, Nikoleta A. ; McCarthy, Kevin T. ; Hebard, Arthur F.</creatorcontrib><description>Growth by molecular-beam epitaxy of the dilute magnetic alloy GaMnN is reported. The GaMnN contains 7.0% Mn as determined by Auger electron spectroscopy, and is single phase as determined by x-ray diffraction and reflection high-energy electron diffraction. Both magnetic and magnetotransport data are reported. The results show the anomalous Hall effect, negative magnetoresistance, and magnetic hysteresis at 10 K, indicating that Mn is incorporating into the GaN and forming the ferromagnetic semiconductor GaMnN. At 25 K the anomalous Hall term vanishes, indicating a Curie temperature between 10 and 25 K.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.1397763</identifier><language>eng</language><ispartof>Applied physics letters, 2001-08, Vol.79 (9), p.1312-1314</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c328t-e45f49b9a1aeab0cd5689629f3cf26c45cfb285a288c1ac6afcc453eafd8a97b3</citedby><cites>FETCH-LOGICAL-c328t-e45f49b9a1aeab0cd5689629f3cf26c45cfb285a288c1ac6afcc453eafd8a97b3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,782,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Overberg, Mark E.</creatorcontrib><creatorcontrib>Abernathy, Cammy R.</creatorcontrib><creatorcontrib>Pearton, Stephen J.</creatorcontrib><creatorcontrib>Theodoropoulou, Nikoleta A.</creatorcontrib><creatorcontrib>McCarthy, Kevin T.</creatorcontrib><creatorcontrib>Hebard, Arthur F.</creatorcontrib><title>Indication of ferromagnetism in molecular-beam-epitaxy-derived N-type GaMnN</title><title>Applied physics letters</title><description>Growth by molecular-beam epitaxy of the dilute magnetic alloy GaMnN is reported. The GaMnN contains 7.0% Mn as determined by Auger electron spectroscopy, and is single phase as determined by x-ray diffraction and reflection high-energy electron diffraction. Both magnetic and magnetotransport data are reported. The results show the anomalous Hall effect, negative magnetoresistance, and magnetic hysteresis at 10 K, indicating that Mn is incorporating into the GaN and forming the ferromagnetic semiconductor GaMnN. At 25 K the anomalous Hall term vanishes, indicating a Curie temperature between 10 and 25 K.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2001</creationdate><recordtype>article</recordtype><recordid>eNotkL1OwzAYRS0EEqUw8AZeGVz8Ezv2iCpoK0pZYI6-OJ-RUf5kB0TeniI6Hd0z3OEQciv4SnCj7sVKKFeWRp2RheBlyZQQ9pwsOOeKGafFJbnK-fM4tVRqQZ53fRM9THHo6RBowJSGDj56nGLuaOxpN7Tov1pIrEboGI5xgp-ZNZjiNzb0wKZ5RLqBl_5wTS4CtBlvTlyS96fHt_WW7V83u_XDnnkl7cSw0KFwtQMBCDX3jTbWGemC8kEaX2gfamk1SGu9AG8g-KNUCKGx4MpaLcnd_69PQ84JQzWm2EGaK8GrvwqVqE4V1C9Ur1BM</recordid><startdate>20010827</startdate><enddate>20010827</enddate><creator>Overberg, Mark E.</creator><creator>Abernathy, Cammy R.</creator><creator>Pearton, Stephen J.</creator><creator>Theodoropoulou, Nikoleta A.</creator><creator>McCarthy, Kevin T.</creator><creator>Hebard, Arthur F.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20010827</creationdate><title>Indication of ferromagnetism in molecular-beam-epitaxy-derived N-type GaMnN</title><author>Overberg, Mark E. ; Abernathy, Cammy R. ; Pearton, Stephen J. ; Theodoropoulou, Nikoleta A. ; McCarthy, Kevin T. ; Hebard, Arthur F.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c328t-e45f49b9a1aeab0cd5689629f3cf26c45cfb285a288c1ac6afcc453eafd8a97b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2001</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Overberg, Mark E.</creatorcontrib><creatorcontrib>Abernathy, Cammy R.</creatorcontrib><creatorcontrib>Pearton, Stephen J.</creatorcontrib><creatorcontrib>Theodoropoulou, Nikoleta A.</creatorcontrib><creatorcontrib>McCarthy, Kevin T.</creatorcontrib><creatorcontrib>Hebard, Arthur F.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Overberg, Mark E.</au><au>Abernathy, Cammy R.</au><au>Pearton, Stephen J.</au><au>Theodoropoulou, Nikoleta A.</au><au>McCarthy, Kevin T.</au><au>Hebard, Arthur F.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Indication of ferromagnetism in molecular-beam-epitaxy-derived N-type GaMnN</atitle><jtitle>Applied physics letters</jtitle><date>2001-08-27</date><risdate>2001</risdate><volume>79</volume><issue>9</issue><spage>1312</spage><epage>1314</epage><pages>1312-1314</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>Growth by molecular-beam epitaxy of the dilute magnetic alloy GaMnN is reported. The GaMnN contains 7.0% Mn as determined by Auger electron spectroscopy, and is single phase as determined by x-ray diffraction and reflection high-energy electron diffraction. Both magnetic and magnetotransport data are reported. The results show the anomalous Hall effect, negative magnetoresistance, and magnetic hysteresis at 10 K, indicating that Mn is incorporating into the GaN and forming the ferromagnetic semiconductor GaMnN. At 25 K the anomalous Hall term vanishes, indicating a Curie temperature between 10 and 25 K.</abstract><doi>10.1063/1.1397763</doi><tpages>3</tpages><oa>free_for_read</oa></addata></record>
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1077-3118
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title Indication of ferromagnetism in molecular-beam-epitaxy-derived N-type GaMnN
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-27T04%3A37%3A04IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Indication%20of%20ferromagnetism%20in%20molecular-beam-epitaxy-derived%20N-type%20GaMnN&rft.jtitle=Applied%20physics%20letters&rft.au=Overberg,%20Mark%20E.&rft.date=2001-08-27&rft.volume=79&rft.issue=9&rft.spage=1312&rft.epage=1314&rft.pages=1312-1314&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.1397763&rft_dat=%3Ccrossref%3E10_1063_1_1397763%3C/crossref%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c328t-e45f49b9a1aeab0cd5689629f3cf26c45cfb285a288c1ac6afcc453eafd8a97b3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true