Two-dimensional simulation of polymer field-effect transistor

A two-dimensional simulation of intrinsic top-contact field-effect transistor is presented. The simulated structure is unique to organic transistors and hence is most relevant. By time resolving the operation of such a transistor, the mechanisms underlying its operation are resolved. The effect of t...

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Bibliographic Details
Published in:Applied physics letters 2001-10, Vol.79 (18), p.2987-2989
Main Authors: Tessler, N., Roichman, Y.
Format: Article
Language:English
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Summary:A two-dimensional simulation of intrinsic top-contact field-effect transistor is presented. The simulated structure is unique to organic transistors and hence is most relevant. By time resolving the operation of such a transistor, the mechanisms underlying its operation are resolved. The effect of this device configuration on the measured “intrinsic” material properties is also discussed and shown to explain previously reported features.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1415374