Field emission from porous (100) GaP with modified morphology

Morphology of n-type porous GaP samples with (100) crystal orientation was modified by postchemical etching for field-emitter application. The structures produced have uniform size and shape distribution and are found to show good emission characteristics. The mechanism of the morphology modificatio...

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Bibliographic Details
Published in:Applied physics letters 2001-12, Vol.79 (24), p.4016-4018
Main Authors: Ichizli, V., Hartnagel, H. L., Mimura, H., Shimawaki, H., Yokoo, K.
Format: Article
Language:English
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Summary:Morphology of n-type porous GaP samples with (100) crystal orientation was modified by postchemical etching for field-emitter application. The structures produced have uniform size and shape distribution and are found to show good emission characteristics. The mechanism of the morphology modification is explained, and a strong correlation between field-emission characteristics and postchemical etching time is shown.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1425456