Complete suppression of the transient enhanced diffusion of B implanted in preamorphized Si by interstitial trapping in a spatially separated C-rich layer

A method for completely suppressing the transient enhanced diffusion (TED) of boron implanted in preamorphized silicon is demonstrated. Boron is implanted in a molecular beam epitaxy (MBE) grown silicon sample that has been previously amorphized by silicon implantation. The sample is then annealed i...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2001-12, Vol.79 (25), p.4145-4147
Main Authors: Napolitani, E., Coati, A., De Salvador, D., Carnera, A., Mirabella, S., Scalese, S., Priolo, F.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c293t-3e03ff765e3f2292e05cf9cdd82cf70ece16e6759c8d638edf498f6cb0e4e0143
cites cdi_FETCH-LOGICAL-c293t-3e03ff765e3f2292e05cf9cdd82cf70ece16e6759c8d638edf498f6cb0e4e0143
container_end_page 4147
container_issue 25
container_start_page 4145
container_title Applied physics letters
container_volume 79
creator Napolitani, E.
Coati, A.
De Salvador, D.
Carnera, A.
Mirabella, S.
Scalese, S.
Priolo, F.
description A method for completely suppressing the transient enhanced diffusion (TED) of boron implanted in preamorphized silicon is demonstrated. Boron is implanted in a molecular beam epitaxy (MBE) grown silicon sample that has been previously amorphized by silicon implantation. The sample is then annealed in order to epitaxially regrow the amorphous layer and electrically activate the dopant. The backflow of silicon interstitials released by the preamorphization end-of-range (EOR) damage is completely trapped by a carbon-rich silicon layer interposed by MBE between the damage and the implanted boron. No appreciable TED is observed in the samples up to complete dissolution of the EOR damage, and complete electrical activation is obtained. The method might be considered for the realization of ultrashallow junctions for the far future complementary metal–oxide–semiconductor technology nodes.
doi_str_mv 10.1063/1.1425458
format article
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_1425458</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_1425458</sourcerecordid><originalsourceid>FETCH-LOGICAL-c293t-3e03ff765e3f2292e05cf9cdd82cf70ece16e6759c8d638edf498f6cb0e4e0143</originalsourceid><addsrcrecordid>eNo1kMtOhDAUhhujiTi68A26dcHYCy2wVOItmcSFuiadcio1UJq2s8BH8WmFOK5OzvdfFj9C15RsKZH8lm5pwUQhqhOUUVKWOae0OkUZIYTnshb0HF3E-LW8gnGeoZ9mGv0ACXA8eB8gRjs5PBmcesApKBctuITB9cpp6HBnjTn8e-6xXcLKpUWwDi9xNU7B9_Z7AW8W7-cFJwgx2WTVsPZ5b93nalY4erXSYcYRvApqbWnyYHWPBzVDuERnRg0Rro53gz4eH96b53z3-vTS3O1yzWqecg6EG1NKAdwwVjMgQptad13FtCkJaKASZClqXXWSV9CZoq6M1HsCBRBa8A26-evVYYoxgGl9sKMKc0tJu47a0vY4Kv8FNE9tnw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Complete suppression of the transient enhanced diffusion of B implanted in preamorphized Si by interstitial trapping in a spatially separated C-rich layer</title><source>American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)</source><source>AIP - American Institute of Physics</source><creator>Napolitani, E. ; Coati, A. ; De Salvador, D. ; Carnera, A. ; Mirabella, S. ; Scalese, S. ; Priolo, F.</creator><creatorcontrib>Napolitani, E. ; Coati, A. ; De Salvador, D. ; Carnera, A. ; Mirabella, S. ; Scalese, S. ; Priolo, F.</creatorcontrib><description>A method for completely suppressing the transient enhanced diffusion (TED) of boron implanted in preamorphized silicon is demonstrated. Boron is implanted in a molecular beam epitaxy (MBE) grown silicon sample that has been previously amorphized by silicon implantation. The sample is then annealed in order to epitaxially regrow the amorphous layer and electrically activate the dopant. The backflow of silicon interstitials released by the preamorphization end-of-range (EOR) damage is completely trapped by a carbon-rich silicon layer interposed by MBE between the damage and the implanted boron. No appreciable TED is observed in the samples up to complete dissolution of the EOR damage, and complete electrical activation is obtained. The method might be considered for the realization of ultrashallow junctions for the far future complementary metal–oxide–semiconductor technology nodes.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.1425458</identifier><language>eng</language><ispartof>Applied physics letters, 2001-12, Vol.79 (25), p.4145-4147</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c293t-3e03ff765e3f2292e05cf9cdd82cf70ece16e6759c8d638edf498f6cb0e4e0143</citedby><cites>FETCH-LOGICAL-c293t-3e03ff765e3f2292e05cf9cdd82cf70ece16e6759c8d638edf498f6cb0e4e0143</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,782,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Napolitani, E.</creatorcontrib><creatorcontrib>Coati, A.</creatorcontrib><creatorcontrib>De Salvador, D.</creatorcontrib><creatorcontrib>Carnera, A.</creatorcontrib><creatorcontrib>Mirabella, S.</creatorcontrib><creatorcontrib>Scalese, S.</creatorcontrib><creatorcontrib>Priolo, F.</creatorcontrib><title>Complete suppression of the transient enhanced diffusion of B implanted in preamorphized Si by interstitial trapping in a spatially separated C-rich layer</title><title>Applied physics letters</title><description>A method for completely suppressing the transient enhanced diffusion (TED) of boron implanted in preamorphized silicon is demonstrated. Boron is implanted in a molecular beam epitaxy (MBE) grown silicon sample that has been previously amorphized by silicon implantation. The sample is then annealed in order to epitaxially regrow the amorphous layer and electrically activate the dopant. The backflow of silicon interstitials released by the preamorphization end-of-range (EOR) damage is completely trapped by a carbon-rich silicon layer interposed by MBE between the damage and the implanted boron. No appreciable TED is observed in the samples up to complete dissolution of the EOR damage, and complete electrical activation is obtained. The method might be considered for the realization of ultrashallow junctions for the far future complementary metal–oxide–semiconductor technology nodes.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2001</creationdate><recordtype>article</recordtype><recordid>eNo1kMtOhDAUhhujiTi68A26dcHYCy2wVOItmcSFuiadcio1UJq2s8BH8WmFOK5OzvdfFj9C15RsKZH8lm5pwUQhqhOUUVKWOae0OkUZIYTnshb0HF3E-LW8gnGeoZ9mGv0ACXA8eB8gRjs5PBmcesApKBctuITB9cpp6HBnjTn8e-6xXcLKpUWwDi9xNU7B9_Z7AW8W7-cFJwgx2WTVsPZ5b93nalY4erXSYcYRvApqbWnyYHWPBzVDuERnRg0Rro53gz4eH96b53z3-vTS3O1yzWqecg6EG1NKAdwwVjMgQptad13FtCkJaKASZClqXXWSV9CZoq6M1HsCBRBa8A26-evVYYoxgGl9sKMKc0tJu47a0vY4Kv8FNE9tnw</recordid><startdate>20011217</startdate><enddate>20011217</enddate><creator>Napolitani, E.</creator><creator>Coati, A.</creator><creator>De Salvador, D.</creator><creator>Carnera, A.</creator><creator>Mirabella, S.</creator><creator>Scalese, S.</creator><creator>Priolo, F.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20011217</creationdate><title>Complete suppression of the transient enhanced diffusion of B implanted in preamorphized Si by interstitial trapping in a spatially separated C-rich layer</title><author>Napolitani, E. ; Coati, A. ; De Salvador, D. ; Carnera, A. ; Mirabella, S. ; Scalese, S. ; Priolo, F.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c293t-3e03ff765e3f2292e05cf9cdd82cf70ece16e6759c8d638edf498f6cb0e4e0143</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2001</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Napolitani, E.</creatorcontrib><creatorcontrib>Coati, A.</creatorcontrib><creatorcontrib>De Salvador, D.</creatorcontrib><creatorcontrib>Carnera, A.</creatorcontrib><creatorcontrib>Mirabella, S.</creatorcontrib><creatorcontrib>Scalese, S.</creatorcontrib><creatorcontrib>Priolo, F.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Napolitani, E.</au><au>Coati, A.</au><au>De Salvador, D.</au><au>Carnera, A.</au><au>Mirabella, S.</au><au>Scalese, S.</au><au>Priolo, F.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Complete suppression of the transient enhanced diffusion of B implanted in preamorphized Si by interstitial trapping in a spatially separated C-rich layer</atitle><jtitle>Applied physics letters</jtitle><date>2001-12-17</date><risdate>2001</risdate><volume>79</volume><issue>25</issue><spage>4145</spage><epage>4147</epage><pages>4145-4147</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>A method for completely suppressing the transient enhanced diffusion (TED) of boron implanted in preamorphized silicon is demonstrated. Boron is implanted in a molecular beam epitaxy (MBE) grown silicon sample that has been previously amorphized by silicon implantation. The sample is then annealed in order to epitaxially regrow the amorphous layer and electrically activate the dopant. The backflow of silicon interstitials released by the preamorphization end-of-range (EOR) damage is completely trapped by a carbon-rich silicon layer interposed by MBE between the damage and the implanted boron. No appreciable TED is observed in the samples up to complete dissolution of the EOR damage, and complete electrical activation is obtained. The method might be considered for the realization of ultrashallow junctions for the far future complementary metal–oxide–semiconductor technology nodes.</abstract><doi>10.1063/1.1425458</doi><tpages>3</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0003-6951
ispartof Applied physics letters, 2001-12, Vol.79 (25), p.4145-4147
issn 0003-6951
1077-3118
language eng
recordid cdi_crossref_primary_10_1063_1_1425458
source American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list); AIP - American Institute of Physics
title Complete suppression of the transient enhanced diffusion of B implanted in preamorphized Si by interstitial trapping in a spatially separated C-rich layer
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-27T07%3A40%3A58IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Complete%20suppression%20of%20the%20transient%20enhanced%20diffusion%20of%20B%20implanted%20in%20preamorphized%20Si%20by%20interstitial%20trapping%20in%20a%20spatially%20separated%20C-rich%20layer&rft.jtitle=Applied%20physics%20letters&rft.au=Napolitani,%20E.&rft.date=2001-12-17&rft.volume=79&rft.issue=25&rft.spage=4145&rft.epage=4147&rft.pages=4145-4147&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.1425458&rft_dat=%3Ccrossref%3E10_1063_1_1425458%3C/crossref%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c293t-3e03ff765e3f2292e05cf9cdd82cf70ece16e6759c8d638edf498f6cb0e4e0143%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true