Breakdown voltage in thin III–V avalanche photodiodes

The dead-space multiplication theory of Hayat and Saleh [J. Lightwave Technol. 10, 1415 (1992)], in conjunction with the multiplication-width-independent ionization-coefficient model developed by Saleh et al. [IEEE Trans. Electron Devices 47, 625 (2000)], are shown to accurately predict breakdown vo...

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Bibliographic Details
Published in:Applied physics letters 2001-12, Vol.79 (24), p.4037-4039
Main Authors: Saleh, Mohammad A., Hayat, Majeed M., Kwon, Oh-Hyun, Holmes, Archie L., Campbell, Joe C., Saleh, Bahaa E. A., Teich, Malvin C.
Format: Article
Language:English
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Summary:The dead-space multiplication theory of Hayat and Saleh [J. Lightwave Technol. 10, 1415 (1992)], in conjunction with the multiplication-width-independent ionization-coefficient model developed by Saleh et al. [IEEE Trans. Electron Devices 47, 625 (2000)], are shown to accurately predict breakdown voltages for thin avalanche photodiodes of GaAs, InP, In0.52Al0.48As, and Al0.2Ga0.8As, over a broad range of device widths. The breakdown voltage is determined from the analytical expression for the impulse-response-function decay rate.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1425463