Tetrahedral amorphous-carbon thin films for silicon-on-insulator application

The application of a silicon-on-insulator substrate in a high-power integrated circuit is limited by the self-heating effect, caused by the poor thermal conductivity of the buried SiO2. We introduce tetrahedral amorphous-carbon thin films, formed by the filtered arc deposition method, as an alterati...

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Bibliographic Details
Published in:Applied physics letters 2002-02, Vol.80 (5), p.743-745
Main Authors: Song, Z. R., Yu, Y. H., Li, C. L., Zou, S. C., Zhang, F. M., Wang, X., Shen, D. S., Luo, E. Z., Sundaravel, B., Wong, S. P., Wilson, I. H.
Format: Article
Language:English
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Summary:The application of a silicon-on-insulator substrate in a high-power integrated circuit is limited by the self-heating effect, caused by the poor thermal conductivity of the buried SiO2. We introduce tetrahedral amorphous-carbon thin films, formed by the filtered arc deposition method, as an alteration. We investigated the surface morphology, microstructure, and electrical properties of these films. The films deposited under a substrate bias of −200 V displayed outstanding surface topography (low surface roughness with the Rrms value under 0.5 nm) and excellent electrical property (breakdown field of 4.7 MV/cm). The film has a high content of sp3 bonds of carbon (87%) and low content of oxygen (
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1445472