Raman scattering in GaN pillar arrays

We present a detailed study of GaN pillar arrays by atomic force microscopy (AFM), Raman spectroscopy, and photoluminescence (PL) spectroscopy. AFM is used to characterize the shape of the GaN pillars and revealed a large roughness of etched pillar surfaces. Raman scattering spectra of the pillars a...

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Bibliographic Details
Published in:Journal of applied physics 2002-03, Vol.91 (5), p.2866-2869
Main Authors: Demangeot, F., Gleize, J., Frandon, J., Renucci, M. A., Kuball, M., Peyrade, D., Manin-Ferlazzo, L., Chen, Y., Grandjean, N.
Format: Article
Language:English
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Summary:We present a detailed study of GaN pillar arrays by atomic force microscopy (AFM), Raman spectroscopy, and photoluminescence (PL) spectroscopy. AFM is used to characterize the shape of the GaN pillars and revealed a large roughness of etched pillar surfaces. Raman scattering spectra of the pillars are well described by angular dispersion of polar optical phonons induced by the three-dimensional shape of the pillar. Additional Raman scattering has been tentatively assigned to the activation of the high frequency B1 silent mode by defects introduced during the ion etching. This result is well correlated with the appearance of donor and acceptor-related PL of the GaN pillars. N vacancy or/and Ga interstitials would be likely candidates for donors in the nonstoichiometric GaN near the surface of the etched pillars.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.1445492