Formation and decay mechanisms of electron–hole pairs in amorphous SiO2

We present theoretical evidence for the creation of an electron–hole pair at an edge-sharing SiO4 site that is supposed to exist in a-SiO2 as an intrinsic structural defect. The present electron–hole pair consists of a nonbridging oxygen hole center and an E′ center, but these paramagnetic defects d...

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Bibliographic Details
Published in:Applied physics letters 2002-02, Vol.80 (7), p.1147-1149
Main Authors: Uchino, T., Takahashi, M., Yoko, T.
Format: Article
Language:English
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Summary:We present theoretical evidence for the creation of an electron–hole pair at an edge-sharing SiO4 site that is supposed to exist in a-SiO2 as an intrinsic structural defect. The present electron–hole pair consists of a nonbridging oxygen hole center and an E′ center, but these paramagnetic defects do not form a close pair but are separately located by over ∼4 Å. The subsequent decay mechanism along with the related radiolytic process is also discussed.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1448173