Self-assembled InAs quantum wires on InP(001)

We report a study on self-assembled InAs quantum wires on a planar surface of InP(001), grown by molecular-beam epitaxy and examined by in situ scanning tunneling microscopy and photoluminescence (PL). The detailed morphology of the quantum wires including width and height distributions is presented...

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Bibliographic Details
Published in:Journal of applied physics 2002-03, Vol.91 (6), p.3925-3927
Main Authors: Yang, Haeyeon, Mu, Xiaodong, Zotova, Ioulia B., Ding, Yujie J., Salamo, Gregory J.
Format: Article
Language:English
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Summary:We report a study on self-assembled InAs quantum wires on a planar surface of InP(001), grown by molecular-beam epitaxy and examined by in situ scanning tunneling microscopy and photoluminescence (PL). The detailed morphology of the quantum wires including width and height distributions is presented. The quantum wires cover more than 95% of the surface area. The spectral range of the PL emission includes the technologically important 1.55 μm. In the PL emission, high optical anisotropy of more than 50% has been observed at 4.2 K and at room temperature indicating strong confinement.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.1448862