Band alignment of ZnSe/Zn0.75Mg15Be10Se heterostructures

The optical properties and band alignment of ZnSe/ZnMgBeSe heterostructures are investigated. Two sets of ZnSe/ZnMgBeSe multi-quantum-well structures that consist of five or three wells with different well thicknesses and 100-nm-thick ZnMgBeSe barrier layers are grown on GaAs (100) substrates by mol...

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Bibliographic Details
Published in:Journal of applied physics 2002-05, Vol.91 (9), p.5811-5814
Main Authors: Godo, K., Makino, H., Cho, M. W., Chang, J. H., Hong, S. K., Yao, T., Shen, M. Y., Goto, T.
Format: Article
Language:English
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Summary:The optical properties and band alignment of ZnSe/ZnMgBeSe heterostructures are investigated. Two sets of ZnSe/ZnMgBeSe multi-quantum-well structures that consist of five or three wells with different well thicknesses and 100-nm-thick ZnMgBeSe barrier layers are grown on GaAs (100) substrates by molecular beam epitaxy. Low-temperature photoluminescence spectra show dominant sharp excitonic emission whose peak position systematically shifts to the higher energy side with decreasing the well thickness. Photoluminescence excitation spectra show optical transitions between excited quantum levels in addition to the ground levels. The standard analysis based on the effective-mass approximation gives the valence band offset of ΔEυ=(0.4±0.1)ΔEg. This is consistent with calculated values based on Harrison’s linear combination of atomic orbitals theory.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.1468279