Quantitative analysis of one-dimensional dopant profile by electron holography

The one-dimensional dopant profile of a silicon p–n junction was characterized using off-axis electron holography in a transmission electron microscope (TEM). Quantitative comparisons were made with simulated voltage profiles based on data obtained from secondary-ion mass spectroscopy. Close agreeme...

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Bibliographic Details
Published in:Applied physics letters 2002-04, Vol.80 (17), p.3213-3215
Main Authors: McCartney, M. R., Gribelyuk, M. A., Li, Jing, Ronsheim, P., McMurray, J. S., Smith, David J.
Format: Article
Language:English
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Summary:The one-dimensional dopant profile of a silicon p–n junction was characterized using off-axis electron holography in a transmission electron microscope (TEM). Quantitative comparisons were made with simulated voltage profiles based on data obtained from secondary-ion mass spectroscopy. Close agreement was obtained over a range of sample thicknesses, and a spatial resolution of 5 nm and sensitivity of 0.1 V were established. By using a sample that had been wedge polished and briefly ion milled, depleted surface layers did not need to be taken into account, and beam-induced charging was removed by carbon coating one exposed surface of the TEM specimen.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1473702