Low-resistant and high-transparent Ru/Ni ohmic contact on p -type GaN

We report a low-resistant and high-transparent Ru-based ohmic contact on p-type GaN through oxidation annealing under O2 atmosphere. A low resistivity of 4.5×10−5 Ω cm2 and high light transmittance (84.6%) were simultaneously obtained from oxidized Ru (50 Å)/Ni (50 Å) contact. The RuO2 formed on p-t...

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Bibliographic Details
Published in:Applied physics letters 2002-04, Vol.80 (16), p.2937-2939
Main Authors: Jang, Ho Won, Urbanek, W., Yoo, M. C., Lee, Jong-Lam
Format: Article
Language:English
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Summary:We report a low-resistant and high-transparent Ru-based ohmic contact on p-type GaN through oxidation annealing under O2 atmosphere. A low resistivity of 4.5×10−5 Ω cm2 and high light transmittance (84.6%) were simultaneously obtained from oxidized Ru (50 Å)/Ni (50 Å) contact. The RuO2 formed on p-type GaN played a role in reducing the effective Schottky barrier height for injection of holes and NiO layer produced on the RuO2 acted as a diffusion barrier for the outdiffusion of released Ga and N atoms, resulting in the reduction of the contact resistivity as well as the enhancement of light transmission.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1474609