Room-temperature, ground-state lasing for red-emitting vertically aligned InAlAs/AlGaAs quantum dots grown on a GaAs(100) substrate

The effect of the growth temperature on the properties of InAlAs/AlGaAs quantum dots grown on GaAs(100) substrates is investigated. The optical efficiency and structural uniformity are improved by increasing the growth temperature from 530 to 560 °C. The improvements of InAlAs/AlGaAs quantum-dot cha...

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Bibliographic Details
Published in:Applied physics letters 2002-05, Vol.80 (20), p.3769-3771
Main Authors: Liu, H. Y., Sellers, I. R., Airey, R. J., Steer, M. J., Houston, P. A., Mowbray, D. J., Cockburn, J., Skolnick, M. S., Xu, B., Wang, Z. G.
Format: Article
Language:English
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Summary:The effect of the growth temperature on the properties of InAlAs/AlGaAs quantum dots grown on GaAs(100) substrates is investigated. The optical efficiency and structural uniformity are improved by increasing the growth temperature from 530 to 560 °C. The improvements of InAlAs/AlGaAs quantum-dot characteristics could be explained by suppressing the incorporation of oxygen and the formation of group-III vacancies. Furthermore, edge-emitting laser diodes with six quantum-dot layers grown at 560 °C have been fabricated. Lasing occurs via the ground state at 725 nm, with a room-temperature threshold current density of 3.9 kA/cm2, significantly better than previously reported values for this quantum-dot systems.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1481245