Gallium vacancy and the residual acceptor in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence

Positron lifetime, photoluminescence (PL), and Hall measurements were performed to study undoped p-type gallium antimonide materials. A 314 ps positron lifetime component was attributed to Ga vacancy (VGa) related defect. Isochronal annealing studies showed at 300 °C annealing, the 314 ps positron l...

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Published in:Applied physics letters 2002-05, Vol.80 (21), p.3934-3936
Main Authors: Ling, C. C., Mui, W. K., Lam, C. H., Beling, C. D., Fung, S., Lui, M. K., Cheah, K. W., Li, K. F., Zhao, Y. W., Gong, M.
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container_end_page 3936
container_issue 21
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container_title Applied physics letters
container_volume 80
creator Ling, C. C.
Mui, W. K.
Lam, C. H.
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Fung, S.
Lui, M. K.
Cheah, K. W.
Li, K. F.
Zhao, Y. W.
Gong, M.
description Positron lifetime, photoluminescence (PL), and Hall measurements were performed to study undoped p-type gallium antimonide materials. A 314 ps positron lifetime component was attributed to Ga vacancy (VGa) related defect. Isochronal annealing studies showed at 300 °C annealing, the 314 ps positron lifetime component and the two observed PL signals (777 and 797 meV) disappeared, which gave clear and strong evidence for their correlation. However, the hole concentration (∼2×1017 cm−3) was observed to be independent of the annealing temperature. Although the residual acceptor is generally related to the VGa defect, at least for cases with annealing temperatures above 300 °C, VGa is not the acceptor responsible for the p-type conduction.
doi_str_mv 10.1063/1.1482419
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title Gallium vacancy and the residual acceptor in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence
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