Reduced electromigration of Cu wires by surface coating

Electromigration in on-chip Cu interconnections with a selective electroless metal coating, CoWP, CoSnP, or Pd, on the top surface of Cu damascene lines has been investigated. The 10–20 nm thick metal cap significantly improves electromigration lifetime by providing protection against interface diff...

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Bibliographic Details
Published in:Applied physics letters 2002-09, Vol.81 (10), p.1782-1784
Main Authors: Hu, C.-K., Gignac, L., Rosenberg, R., Liniger, E., Rubino, J., Sambucetti, C., Domenicucci, A., Chen, X., Stamper, A. K.
Format: Article
Language:English
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Summary:Electromigration in on-chip Cu interconnections with a selective electroless metal coating, CoWP, CoSnP, or Pd, on the top surface of Cu damascene lines has been investigated. The 10–20 nm thick metal cap significantly improves electromigration lifetime by providing protection against interface diffusion of Cu which has been the leading contributor to metal line failure by electromigration.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1504491