Large g -factor enhancement in high-mobility InAs/AlSb quantum wells

We discuss the growth by molecular-beam epitaxy, and studies of the low-temperature electrical properties, of undoped InAs/AlSb quantum wells. The two-dimensional electron gas realized in the wells exhibits high mobility at low temperatures, and an analysis of its Shubnikov–de Haas oscillations sugg...

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Bibliographic Details
Published in:Applied physics letters 2002-09, Vol.81 (10), p.1833-1835
Main Authors: Sadofyev, Yu. G., Ramamoorthy, A., Naser, B., Bird, J. P., Johnson, S. R., Zhang, Y.-H.
Format: Article
Language:English
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Summary:We discuss the growth by molecular-beam epitaxy, and studies of the low-temperature electrical properties, of undoped InAs/AlSb quantum wells. The two-dimensional electron gas realized in the wells exhibits high mobility at low temperatures, and an analysis of its Shubnikov–de Haas oscillations suggests this mobility is limited by scattering from remotely located unintentional dopants. Spin splitting of the oscillations is clearly resolved at 4.2 K, revealing a g-factor as large as −60 at high magnetic fields. The size of this enhancement increases with decreasing electron density, and is thought to reflect the associated increase in the strength of the effective Coulomb interaction.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1504882