Hydrogen-induced degradation in ferroelectric Bi3.25La0.75Ti3O12

Effects of forming gas annealing (FGA) were investigated on ferroelectric Bi3.25La0.75Ti3O12 (BLT) thin films fabricated by a chemical solution deposition. With the FGA up to 350 °C, the Pt/BLT/Pt capacitors showed good ferroelectric characteristics without significant degradation. As the FGA temper...

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Bibliographic Details
Published in:Applied physics letters 2002-09, Vol.81 (10), p.1857-1859
Main Authors: Seo, Sunae, Yoon, Jong-Gul, Kim, J. D., Song, T. K., Kang, B. S., Noh, T. W., Lee, Y. K., Kim, Ch. J., Lee, I. S., Lee, J. K., Park, Y. S.
Format: Article
Language:English
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Summary:Effects of forming gas annealing (FGA) were investigated on ferroelectric Bi3.25La0.75Ti3O12 (BLT) thin films fabricated by a chemical solution deposition. With the FGA up to 350 °C, the Pt/BLT/Pt capacitors showed good ferroelectric characteristics without significant degradation. As the FGA temperature was increased, a decomposition of the BLT powder sample was observed by using thermogravimetric analysis. By comparing the time-dependent weight loss of BLT with that of Bi4Ti3O12 during FGA, La doping was found to significantly impede the decomposition rate. The decomposition, especially in the (Bi2O2)2+ layers, was discussed as a hydrogen-induced degradation mechanism in the Bi-layered perovskite ferroelectrics.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1505110