On the origin of the blueshift from type-II quantum dots emission using microphotoluminescence

We have studied type-II InP/GaAs self-assembled quantum dots by microphotoluminescence spectroscopy. Sharp spectral features were observed on top of a broad emission band. They are associated to statistical fluctuations from the ensemble of dots. Photoluminescence measurements as a function of the e...

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Bibliographic Details
Published in:Applied physics letters 2002-10, Vol.81 (15), p.2743-2745
Main Authors: Nakaema, M. K. K., Iikawa, F., Brasil, M. J. S. P., Ribeiro, E., Medeiros-Ribeiro, G., Carvalho, W., Maialle, M. Z., Degani, M. H.
Format: Article
Language:English
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Summary:We have studied type-II InP/GaAs self-assembled quantum dots by microphotoluminescence spectroscopy. Sharp spectral features were observed on top of a broad emission band. They are associated to statistical fluctuations from the ensemble of dots. Photoluminescence measurements as a function of the excitation intensity revealed markedly distinct behaviors: the broadband contour shows a large blueshift while the energy positions of the sharp features remain basically constant. We show that the large blueshift of the broad emission band in type-II quantum dots is not due to the barrier interface potential variation, but to the state filling of higher-energy states.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1511812