High-mobility polymer gate dielectric pentacene thin film transistors

We have fabricated pentacene organic thin film transistors with spin-coated polymer gate dielectric layers, including cross-linked polyvinylphenol and a polyvinylphenol-based copolymer, and obtained devices with excellent electrical characteristics, including carrier mobility as large as 3 cm2/V s,...

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Bibliographic Details
Published in:Journal of applied physics 2002-11, Vol.92 (9), p.5259-5263
Main Authors: Klauk, Hagen, Halik, Marcus, Zschieschang, Ute, Schmid, Günter, Radlik, Wolfgang, Weber, Werner
Format: Article
Language:English
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Summary:We have fabricated pentacene organic thin film transistors with spin-coated polymer gate dielectric layers, including cross-linked polyvinylphenol and a polyvinylphenol-based copolymer, and obtained devices with excellent electrical characteristics, including carrier mobility as large as 3 cm2/V s, subthreshold swing as low as 1.2 V/decade, and on/off current ratio of 105. For comparison, we have also fabricated pentacene transistors using thermally grown silicon dioxide as the gate dielectric and obtained carrier mobilities as large as 1 cm2/V s and subthreshold swing as low as 0.5 V/decade.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.1511826