Hall effect and hole densities in Ga1−xMnxAs

By studying the Hall effect in a series of low resistivity Ga1−xMnxAs samples, accurate values for the hole density p, Mn concentration x, and Curie temperature TC are obtained over the range 0.015⩽x⩽0.08. The hole density corresponds to 90% of the Mn concentration at low x, and has a maximum value...

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Bibliographic Details
Published in:Applied physics letters 2002-10, Vol.81 (16), p.3010-3012
Main Authors: Edmonds, K. W., Wang, K. Y., Campion, R. P., Neumann, A. C., Foxon, C. T., Gallagher, B. L., Main, P. C.
Format: Article
Language:English
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Summary:By studying the Hall effect in a series of low resistivity Ga1−xMnxAs samples, accurate values for the hole density p, Mn concentration x, and Curie temperature TC are obtained over the range 0.015⩽x⩽0.08. The hole density corresponds to 90% of the Mn concentration at low x, and has a maximum value of 1.0×1027 m−3 when TC=125 K. These data allow the first meaningful comparison of mean field predicted Curie temperatures with experiment over a wide range of x. The theory is in qualitative agreement with experiment, but overestimates TC at large x and underestimates TC at low x.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1512822