A scanning tunneling microscopy study of dysprosium silicide nanowire growth on Si(001)

Dysprosium disilicide can form nanowires and three dimensional (3D) islands on the Si(001) surface. The nanowire density and width are metal coverage dependent. Various superstructures are observed on the nanowires. The Si substrate is also reconstructed in either 2×4 or 2×7 superstructures. The nan...

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Published in:Journal of applied physics 2003-01, Vol.93 (1), p.593-599
Main Authors: Liu, B. Z., Nogami, J.
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Language:English
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description Dysprosium disilicide can form nanowires and three dimensional (3D) islands on the Si(001) surface. The nanowire density and width are metal coverage dependent. Various superstructures are observed on the nanowires. The Si substrate is also reconstructed in either 2×4 or 2×7 superstructures. The nanowires have a minimum height of about 0.5 nm with respect to the Si surface; and the heights of the additional layers growing atop nanowires are quantized, consistent with the hexagonal AlB2 type silicide structure. Longer annealing time and higher coverage promote 3D island growth.
doi_str_mv 10.1063/1.1516621
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title A scanning tunneling microscopy study of dysprosium silicide nanowire growth on Si(001)
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