Solar-blind AlGaN-based Schottky photodiodes with low noise and high detectivity

We report on the design, fabrication, and characterization of solar-blind Schottky photodiodes with low noise and high detectivity. The devices were fabricated on n−/n+ AlGaN/GaN heterostructures using a microwave compatible fabrication process. True solar-blind operation with a cutoff wavelength of...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2002-10, Vol.81 (17), p.3272-3274
Main Authors: Biyikli, Necmi, Aytur, Orhan, Kimukin, Ibrahim, Tut, Turgut, Ozbay, Ekmel
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c264t-8cb10118781aa104ff5120af6ed5aa5ffd75e5963e6f77eca2e69cf56e4202843
cites cdi_FETCH-LOGICAL-c264t-8cb10118781aa104ff5120af6ed5aa5ffd75e5963e6f77eca2e69cf56e4202843
container_end_page 3274
container_issue 17
container_start_page 3272
container_title Applied physics letters
container_volume 81
creator Biyikli, Necmi
Aytur, Orhan
Kimukin, Ibrahim
Tut, Turgut
Ozbay, Ekmel
description We report on the design, fabrication, and characterization of solar-blind Schottky photodiodes with low noise and high detectivity. The devices were fabricated on n−/n+ AlGaN/GaN heterostructures using a microwave compatible fabrication process. True solar-blind operation with a cutoff wavelength of ∼274 nm was achieved with AlxGa1−xN (x=0.38) absorption layer. The solar-blind detectors exhibited
doi_str_mv 10.1063/1.1516856
format article
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_1516856</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_1516856</sourcerecordid><originalsourceid>FETCH-LOGICAL-c264t-8cb10118781aa104ff5120af6ed5aa5ffd75e5963e6f77eca2e69cf56e4202843</originalsourceid><addsrcrecordid>eNotkEFLwzAYhoMoOKcH_0GuHjLzJU3aHsfQTRgqTM8lTb7YaF1GExz991bc6eE9vC8vDyG3wBfAtbyHBSjQldJnZAa8LJkEqM7JjHMuma4VXJKrlD6nqISUM_K6i70ZWNuHvaPLfm2eWWsSOrqzXcz5a6SHidGF6DDRY8gd7eOR7mNISM3U6cJHRx1mtDn8hDxekwtv-oQ3J87J--PD22rDti_rp9Vyy6zQRWaVbYFP18oKjAFeeK9AcOM1OmWM8t6VClWtJWpflmiNQF1brzQWgouqkHNy979rh5jSgL45DOHbDGMDvPlT0UBzUiF_AaDiUOg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Solar-blind AlGaN-based Schottky photodiodes with low noise and high detectivity</title><source>American Institute of Physics (AIP) Publications</source><source>American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)</source><creator>Biyikli, Necmi ; Aytur, Orhan ; Kimukin, Ibrahim ; Tut, Turgut ; Ozbay, Ekmel</creator><creatorcontrib>Biyikli, Necmi ; Aytur, Orhan ; Kimukin, Ibrahim ; Tut, Turgut ; Ozbay, Ekmel</creatorcontrib><description>We report on the design, fabrication, and characterization of solar-blind Schottky photodiodes with low noise and high detectivity. The devices were fabricated on n−/n+ AlGaN/GaN heterostructures using a microwave compatible fabrication process. True solar-blind operation with a cutoff wavelength of ∼274 nm was achieved with AlxGa1−xN (x=0.38) absorption layer. The solar-blind detectors exhibited &lt;1.8 nA/cm2 dark current density in the 0–25 V reverse bias regime, and a maximum quantum efficiency of 42% around 267 nm. The photovoltaic detectivity of the devices were in excess of 2.6×1012 cm Hz1/2/W, and the detector noise was 1/f limited with a noise power density less than 3×10−29 A2/Hz at 10 kHz.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.1516856</identifier><language>eng</language><ispartof>Applied physics letters, 2002-10, Vol.81 (17), p.3272-3274</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c264t-8cb10118781aa104ff5120af6ed5aa5ffd75e5963e6f77eca2e69cf56e4202843</citedby><cites>FETCH-LOGICAL-c264t-8cb10118781aa104ff5120af6ed5aa5ffd75e5963e6f77eca2e69cf56e4202843</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,782,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Biyikli, Necmi</creatorcontrib><creatorcontrib>Aytur, Orhan</creatorcontrib><creatorcontrib>Kimukin, Ibrahim</creatorcontrib><creatorcontrib>Tut, Turgut</creatorcontrib><creatorcontrib>Ozbay, Ekmel</creatorcontrib><title>Solar-blind AlGaN-based Schottky photodiodes with low noise and high detectivity</title><title>Applied physics letters</title><description>We report on the design, fabrication, and characterization of solar-blind Schottky photodiodes with low noise and high detectivity. The devices were fabricated on n−/n+ AlGaN/GaN heterostructures using a microwave compatible fabrication process. True solar-blind operation with a cutoff wavelength of ∼274 nm was achieved with AlxGa1−xN (x=0.38) absorption layer. The solar-blind detectors exhibited &lt;1.8 nA/cm2 dark current density in the 0–25 V reverse bias regime, and a maximum quantum efficiency of 42% around 267 nm. The photovoltaic detectivity of the devices were in excess of 2.6×1012 cm Hz1/2/W, and the detector noise was 1/f limited with a noise power density less than 3×10−29 A2/Hz at 10 kHz.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2002</creationdate><recordtype>article</recordtype><recordid>eNotkEFLwzAYhoMoOKcH_0GuHjLzJU3aHsfQTRgqTM8lTb7YaF1GExz991bc6eE9vC8vDyG3wBfAtbyHBSjQldJnZAa8LJkEqM7JjHMuma4VXJKrlD6nqISUM_K6i70ZWNuHvaPLfm2eWWsSOrqzXcz5a6SHidGF6DDRY8gd7eOR7mNISM3U6cJHRx1mtDn8hDxekwtv-oQ3J87J--PD22rDti_rp9Vyy6zQRWaVbYFP18oKjAFeeK9AcOM1OmWM8t6VClWtJWpflmiNQF1brzQWgouqkHNy979rh5jSgL45DOHbDGMDvPlT0UBzUiF_AaDiUOg</recordid><startdate>20021021</startdate><enddate>20021021</enddate><creator>Biyikli, Necmi</creator><creator>Aytur, Orhan</creator><creator>Kimukin, Ibrahim</creator><creator>Tut, Turgut</creator><creator>Ozbay, Ekmel</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20021021</creationdate><title>Solar-blind AlGaN-based Schottky photodiodes with low noise and high detectivity</title><author>Biyikli, Necmi ; Aytur, Orhan ; Kimukin, Ibrahim ; Tut, Turgut ; Ozbay, Ekmel</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c264t-8cb10118781aa104ff5120af6ed5aa5ffd75e5963e6f77eca2e69cf56e4202843</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2002</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Biyikli, Necmi</creatorcontrib><creatorcontrib>Aytur, Orhan</creatorcontrib><creatorcontrib>Kimukin, Ibrahim</creatorcontrib><creatorcontrib>Tut, Turgut</creatorcontrib><creatorcontrib>Ozbay, Ekmel</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Biyikli, Necmi</au><au>Aytur, Orhan</au><au>Kimukin, Ibrahim</au><au>Tut, Turgut</au><au>Ozbay, Ekmel</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Solar-blind AlGaN-based Schottky photodiodes with low noise and high detectivity</atitle><jtitle>Applied physics letters</jtitle><date>2002-10-21</date><risdate>2002</risdate><volume>81</volume><issue>17</issue><spage>3272</spage><epage>3274</epage><pages>3272-3274</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>We report on the design, fabrication, and characterization of solar-blind Schottky photodiodes with low noise and high detectivity. The devices were fabricated on n−/n+ AlGaN/GaN heterostructures using a microwave compatible fabrication process. True solar-blind operation with a cutoff wavelength of ∼274 nm was achieved with AlxGa1−xN (x=0.38) absorption layer. The solar-blind detectors exhibited &lt;1.8 nA/cm2 dark current density in the 0–25 V reverse bias regime, and a maximum quantum efficiency of 42% around 267 nm. The photovoltaic detectivity of the devices were in excess of 2.6×1012 cm Hz1/2/W, and the detector noise was 1/f limited with a noise power density less than 3×10−29 A2/Hz at 10 kHz.</abstract><doi>10.1063/1.1516856</doi><tpages>3</tpages><oa>free_for_read</oa></addata></record>
fulltext fulltext
identifier ISSN: 0003-6951
ispartof Applied physics letters, 2002-10, Vol.81 (17), p.3272-3274
issn 0003-6951
1077-3118
language eng
recordid cdi_crossref_primary_10_1063_1_1516856
source American Institute of Physics (AIP) Publications; American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)
title Solar-blind AlGaN-based Schottky photodiodes with low noise and high detectivity
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-06T16%3A58%3A21IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Solar-blind%20AlGaN-based%20Schottky%20photodiodes%20with%20low%20noise%20and%20high%20detectivity&rft.jtitle=Applied%20physics%20letters&rft.au=Biyikli,%20Necmi&rft.date=2002-10-21&rft.volume=81&rft.issue=17&rft.spage=3272&rft.epage=3274&rft.pages=3272-3274&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.1516856&rft_dat=%3Ccrossref%3E10_1063_1_1516856%3C/crossref%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c264t-8cb10118781aa104ff5120af6ed5aa5ffd75e5963e6f77eca2e69cf56e4202843%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true