Explanation for the leakage current in polycrystalline-silicon thin-film transistors made by Ni-silicide mediated crystallization

The source of the leakage current in polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) made by Ni-mediated crystallization has been investigated. Studies of TFTs and of the crystallization process by in situ transmission electron microscopy show that the crystallization process is a two...

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Bibliographic Details
Published in:Applied physics letters 2002-10, Vol.81 (18), p.3404-3406
Main Authors: van der Zaag, P. J., Verheijen, M. A., Yoon, S. Y., Young, N. D.
Format: Article
Language:English
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Summary:The source of the leakage current in polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) made by Ni-mediated crystallization has been investigated. Studies of TFTs and of the crystallization process by in situ transmission electron microscopy show that the crystallization process is a two-stage process and that the cause of the leakage problem is associated with incomplete crystallization of amorphous-Si. By removing the last pockets of amorphous-Si, for instance, by long anneals, poly-Si TFTs can be made with adequately low leakage current
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1517406