Growth of highly strained germanium dots on Si(001) covered by a silicon nitride layer

We show that germanium dots can be directly grown by molecular beam epitaxy on a silicon (001) surface covered by a very thin (1.5 nm thick) silicon nitride layer. We describe the experimental procedure, which induces the growth of nano-metric size, isolated germanium dots. The germanium dots are in...

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Bibliographic Details
Published in:Applied physics letters 2002-11, Vol.81 (20), p.3843-3845
Main Authors: Derivaz, M., Noé, P., Dianoux, R., Barski, A., Schülli, T., Metzger, T. H.
Format: Article
Language:English
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Summary:We show that germanium dots can be directly grown by molecular beam epitaxy on a silicon (001) surface covered by a very thin (1.5 nm thick) silicon nitride layer. We describe the experimental procedure, which induces the growth of nano-metric size, isolated germanium dots. The germanium dots are in epitaxy with the silicon substrate. Using grazing incidence x-ray diffraction we show that for very small dots the in-plane lattice parameter inside the dots is very close to the silicon lattice parameter while a strong lattice relaxation and/or silicon inter-diffusion take place with increasing dot size.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1519354