On the enhanced electron mobility in strained-silicon inversion layers

The recently reported large enhancement of the electron mobility in strained-Si inversion layers at large carrier concentrations cannot be easily explained: The strong carrier confinement in inversion layers removes the sixfold degeneracy of the conduction-band minima, much as tensile in-plane strai...

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Bibliographic Details
Published in:Journal of applied physics 2002-12, Vol.92 (12), p.7320-7324
Main Authors: Fischetti, M. V., Gámiz, F., Hänsch, W.
Format: Article
Language:English
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Summary:The recently reported large enhancement of the electron mobility in strained-Si inversion layers at large carrier concentrations cannot be easily explained: The strong carrier confinement in inversion layers removes the sixfold degeneracy of the conduction-band minima, much as tensile in-plane strain does, so that the effect of strain should become irrelevant at large sheet carrier densities. The problem is studied by calculating the electron mobility accounting for scattering with phonons and interface roughness. Surprisingly, the latter process is found to be significantly stronger in strained layers for a given interface roughness. Only the ad hoc assumption of increasingly smoother interfaces with increasing strain seems to explain the data.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.1521796