Reduction of buffer layer conduction near plasma-assisted molecular-beam epitaxy grown GaN/AlN interfaces by beryllium doping

Beryllium doping of epitaxial GaN layers is used to reduce leakage currents through interfacial or buffer conducting layers grown by plasma-assisted molecular-beam epitaxy on SiC. Capacitance–voltage measurements of Schottky barrier test structures and dc pinch-off characteristics of unintentionally...

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Bibliographic Details
Published in:Applied physics letters 2002-11, Vol.81 (20), p.3819-3821
Main Authors: Storm, D. F., Katzer, D. S., Binari, S. C., Glaser, E. R., Shanabrook, B. V., Roussos, J. A.
Format: Article
Language:English
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Summary:Beryllium doping of epitaxial GaN layers is used to reduce leakage currents through interfacial or buffer conducting layers grown by plasma-assisted molecular-beam epitaxy on SiC. Capacitance–voltage measurements of Schottky barrier test structures and dc pinch-off characteristics of unintentionally doped GaN high-electron-mobility transistors indicate that these leakage currents are localized near the GaN/AlN interface of our AlGaN/GaN/AlN device structures. Insertion of a 2000 Å Be:GaN layer at the interface reduces these currents by three orders of magnitude.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1522133