Reduction of buffer layer conduction near plasma-assisted molecular-beam epitaxy grown GaN/AlN interfaces by beryllium doping

Beryllium doping of epitaxial GaN layers is used to reduce leakage currents through interfacial or buffer conducting layers grown by plasma-assisted molecular-beam epitaxy on SiC. Capacitance–voltage measurements of Schottky barrier test structures and dc pinch-off characteristics of unintentionally...

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Published in:Applied physics letters 2002-11, Vol.81 (20), p.3819-3821
Main Authors: Storm, D. F., Katzer, D. S., Binari, S. C., Glaser, E. R., Shanabrook, B. V., Roussos, J. A.
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container_end_page 3821
container_issue 20
container_start_page 3819
container_title Applied physics letters
container_volume 81
creator Storm, D. F.
Katzer, D. S.
Binari, S. C.
Glaser, E. R.
Shanabrook, B. V.
Roussos, J. A.
description Beryllium doping of epitaxial GaN layers is used to reduce leakage currents through interfacial or buffer conducting layers grown by plasma-assisted molecular-beam epitaxy on SiC. Capacitance–voltage measurements of Schottky barrier test structures and dc pinch-off characteristics of unintentionally doped GaN high-electron-mobility transistors indicate that these leakage currents are localized near the GaN/AlN interface of our AlGaN/GaN/AlN device structures. Insertion of a 2000 Å Be:GaN layer at the interface reduces these currents by three orders of magnitude.
doi_str_mv 10.1063/1.1522133
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title Reduction of buffer layer conduction near plasma-assisted molecular-beam epitaxy grown GaN/AlN interfaces by beryllium doping
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