Nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on chemical oxide (Si–O–H) and thermal oxide (SiO2 or Si–O–N) underlayers

• Published in: Journal of applied physics 2002-12, Vol.92 (12), p.7168-7174
• Main Authors: Green, M. L., Ho, M.-Y., Busch, B., Wilk, G. D., Sorsch, T., Conard, T., Brijs, B., Vandervorst, W., Räisänen, P. I., Muller, D., Bude, M., Grazul, J.
• Format: Article
• Language: English
• ISSN: 0021-8979; 1089-7550
• DOI: 10.1063/1.1522811

A study was undertaken to determine the efficacy of various underlayers for the nucleation and growth of atomic layer deposited HfO2 films. These were compared to films grown on hydrogen terminated Si. The use of a chemical oxide underlayer results in almost no barrier to film nucleation, enables linear and predictable growth at constant film density, and the most two-dimensionally continuous HfO2 films. The ease of nucleation is due to the large concentration of OH groups in the hydrous, chemical oxide. HfO2 grows on chemical oxide at a coverage rate of about 14% of a monolayer per cycle, and films are about 90% of the theoretical density of crystalline HfO2. Growth on hydrogen terminated Si is characterized by a large barrier to nucleation and growth, resulting in three-dimensional, rough, and nonlinear growth. Thermal oxide/oxynitride underlayers result in a small nucleation barrier, and nonlinear growth at low HfO2 coverages. The use of chemical oxide underlayers clearly results in the best HfO2 layers. Further, the potential to minimize the chemical oxide thickness provides an important research opportunity for high-κ gate dielectric scaling below 1.0 nm effective oxide thickness.