Transport properties of two-dimensional electron gas in different subbands in triangular quantum wells at AlxGa1−xN/GaN heterointerfaces

Magnetotransport properties of modulation-doped Al0.22Ga0.78N/GaN heterostructures were investigated by means of magnetoresistance measurements at low temperatures and high magnetic fields. Strong Shubnikov–de Haas oscillations with the double periodicity are observed. The mobility spectrum is obtai...

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Bibliographic Details
Published in:Applied physics letters 2003-03, Vol.82 (12), p.1872-1874
Main Authors: Zheng, Z. W., Shen, B., Gui, Y. S., Jiang, C. P., Tang, N., Zhang, R., Shi, Y., Zheng, Y. D., Guo, S. L., Zheng, G. Z., Chu, J. H., Someya, T., Arakawa, Y.
Format: Article
Language:English
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Summary:Magnetotransport properties of modulation-doped Al0.22Ga0.78N/GaN heterostructures were investigated by means of magnetoresistance measurements at low temperatures and high magnetic fields. Strong Shubnikov–de Haas oscillations with the double periodicity are observed. The mobility spectrum is obtained, which demonstrates that the mobilities of the two-dimensional electron gas (2DEG) in the two subbands in the triangular quantum well at heterointerface. It is found that the mobility of the 2DEG in the second subband is much higher than that in the first one. This is explained that interface roughness scattering and alloy disorder scattering have much stronger influence on transport properties of the 2DEG in the first subband than that in the second subband in AlxGa1−xN/GaN heterostructures.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1557772