Resonant tunneling in magnetoresistive Ni/NiO/Co nanowire junctions

Magnetotransport studies performed on electrodeposited Ni/NiO/Co nanojunctions show a broad distribution of magnetoresistance values spanning from +40% to −25%, with an average of about 2%, corresponding to observations on large-area junctions. The dispersion in the results can be understood in term...

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Bibliographic Details
Published in:Journal of applied physics 2003-05, Vol.93 (10), p.7029-7031
Main Authors: Sokolov, A., Sabirianov, I. F., Tsymbal, E. Y., Doudin, B., Li, X. Z., Redepenning, J.
Format: Article
Language:English
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Summary:Magnetotransport studies performed on electrodeposited Ni/NiO/Co nanojunctions show a broad distribution of magnetoresistance values spanning from +40% to −25%, with an average of about 2%, corresponding to observations on large-area junctions. The dispersion in the results can be understood in terms of tunneling via localized states in the barrier. Calculations based on Landauer–Büttiker theory explain this behavior in terms of disorder-driven statistical variations in magnetoresistance with a finite probability of the inversion of tunnel magnetoresistance sign due to resonant tunneling.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.1558657