Illumination-induced recovery of Cu(In,Ga)Se2 solar cells after high-energy electron irradiation

Cu ( In , Ga ) Se 2 / CdS / ZnO solar cells irradiated with a 1 MeV electron fluence of 1018 cm−2 degrade to about 80% of their initial conversion efficiency. Illumination with white light at an intensity of 100 mW cm−2 for 3 h at room temperature restores more than 90% of the preirradiation efficie...

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Bibliographic Details
Published in:Applied physics letters 2003-03, Vol.82 (9), p.1410-1412
Main Authors: Jasenek, A., Rau, U., Weinert, K., Schock, H. W., Werner, J. H.
Format: Article
Language:English
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Summary:Cu ( In , Ga ) Se 2 / CdS / ZnO solar cells irradiated with a 1 MeV electron fluence of 1018 cm−2 degrade to about 80% of their initial conversion efficiency. Illumination with white light at an intensity of 100 mW cm−2 for 3 h at room temperature restores more than 90% of the preirradiation efficiency. The healing process is more efficient if the device is kept under open-circuit conditions during illumination than for short-circuit conditions. Injecting minority carriers by voltage bias in the dark, instead of illumination, does not cause enduring device recovery. This behavior of Cu(In,Ga)Se2 is in contrast to illumination-induced defect healing processes reported for other semiconductor materials, like GaAs, InP, or GaP.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1559648