Illumination-induced recovery of Cu(In,Ga)Se2 solar cells after high-energy electron irradiation

Cu ( In , Ga ) Se 2 / CdS / ZnO solar cells irradiated with a 1 MeV electron fluence of 1018 cm−2 degrade to about 80% of their initial conversion efficiency. Illumination with white light at an intensity of 100 mW cm−2 for 3 h at room temperature restores more than 90% of the preirradiation efficie...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2003-03, Vol.82 (9), p.1410-1412
Main Authors: Jasenek, A., Rau, U., Weinert, K., Schock, H. W., Werner, J. H.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c142t-63954af9ac1553b492e34d58990d75a5f489d61bad675024e9baf55d094e4c933
cites cdi_FETCH-LOGICAL-c142t-63954af9ac1553b492e34d58990d75a5f489d61bad675024e9baf55d094e4c933
container_end_page 1412
container_issue 9
container_start_page 1410
container_title Applied physics letters
container_volume 82
creator Jasenek, A.
Rau, U.
Weinert, K.
Schock, H. W.
Werner, J. H.
description Cu ( In , Ga ) Se 2 / CdS / ZnO solar cells irradiated with a 1 MeV electron fluence of 1018 cm−2 degrade to about 80% of their initial conversion efficiency. Illumination with white light at an intensity of 100 mW cm−2 for 3 h at room temperature restores more than 90% of the preirradiation efficiency. The healing process is more efficient if the device is kept under open-circuit conditions during illumination than for short-circuit conditions. Injecting minority carriers by voltage bias in the dark, instead of illumination, does not cause enduring device recovery. This behavior of Cu(In,Ga)Se2 is in contrast to illumination-induced defect healing processes reported for other semiconductor materials, like GaAs, InP, or GaP.
doi_str_mv 10.1063/1.1559648
format article
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_1559648</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_1559648</sourcerecordid><originalsourceid>FETCH-LOGICAL-c142t-63954af9ac1553b492e34d58990d75a5f489d61bad675024e9baf55d094e4c933</originalsourceid><addsrcrecordid>eNotkEFLwzAYhoMoWKcH_0GODsxMmqRtjlLcLAw8qOeaJl-2SNZK0gr9907d6eW9PDw8CN0yumK04A9sxaRUhajOUMZoWRLOWHWOMkopJ4WS7BJdpfR5vDLnPEMfTQjTwfd69ENPfG8nAxZHMMM3xBkPDtfTXdPfb_TyFXKchqAjNhBCwtqNEPHe7_YEeoi7GUMAM8ahxz5Gbf0f8xpdOB0S3Jx2gd7XT2_1M9m-bJr6cUsME_lICq6k0E5pc_TnnVA5cGFlpRS1pdTSiUrZgnXaFqWkuQDVaSelpUqAMIrzBVr-c00cUorg2q_oDzrOLaPtb5qWtac0_AdqB1X6</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Illumination-induced recovery of Cu(In,Ga)Se2 solar cells after high-energy electron irradiation</title><source>American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)</source><source>AIP Journals (American Institute of Physics)</source><creator>Jasenek, A. ; Rau, U. ; Weinert, K. ; Schock, H. W. ; Werner, J. H.</creator><creatorcontrib>Jasenek, A. ; Rau, U. ; Weinert, K. ; Schock, H. W. ; Werner, J. H.</creatorcontrib><description>Cu ( In , Ga ) Se 2 / CdS / ZnO solar cells irradiated with a 1 MeV electron fluence of 1018 cm−2 degrade to about 80% of their initial conversion efficiency. Illumination with white light at an intensity of 100 mW cm−2 for 3 h at room temperature restores more than 90% of the preirradiation efficiency. The healing process is more efficient if the device is kept under open-circuit conditions during illumination than for short-circuit conditions. Injecting minority carriers by voltage bias in the dark, instead of illumination, does not cause enduring device recovery. This behavior of Cu(In,Ga)Se2 is in contrast to illumination-induced defect healing processes reported for other semiconductor materials, like GaAs, InP, or GaP.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.1559648</identifier><language>eng</language><ispartof>Applied physics letters, 2003-03, Vol.82 (9), p.1410-1412</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c142t-63954af9ac1553b492e34d58990d75a5f489d61bad675024e9baf55d094e4c933</citedby><cites>FETCH-LOGICAL-c142t-63954af9ac1553b492e34d58990d75a5f489d61bad675024e9baf55d094e4c933</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,782,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Jasenek, A.</creatorcontrib><creatorcontrib>Rau, U.</creatorcontrib><creatorcontrib>Weinert, K.</creatorcontrib><creatorcontrib>Schock, H. W.</creatorcontrib><creatorcontrib>Werner, J. H.</creatorcontrib><title>Illumination-induced recovery of Cu(In,Ga)Se2 solar cells after high-energy electron irradiation</title><title>Applied physics letters</title><description>Cu ( In , Ga ) Se 2 / CdS / ZnO solar cells irradiated with a 1 MeV electron fluence of 1018 cm−2 degrade to about 80% of their initial conversion efficiency. Illumination with white light at an intensity of 100 mW cm−2 for 3 h at room temperature restores more than 90% of the preirradiation efficiency. The healing process is more efficient if the device is kept under open-circuit conditions during illumination than for short-circuit conditions. Injecting minority carriers by voltage bias in the dark, instead of illumination, does not cause enduring device recovery. This behavior of Cu(In,Ga)Se2 is in contrast to illumination-induced defect healing processes reported for other semiconductor materials, like GaAs, InP, or GaP.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2003</creationdate><recordtype>article</recordtype><recordid>eNotkEFLwzAYhoMoWKcH_0GODsxMmqRtjlLcLAw8qOeaJl-2SNZK0gr9907d6eW9PDw8CN0yumK04A9sxaRUhajOUMZoWRLOWHWOMkopJ4WS7BJdpfR5vDLnPEMfTQjTwfd69ENPfG8nAxZHMMM3xBkPDtfTXdPfb_TyFXKchqAjNhBCwtqNEPHe7_YEeoi7GUMAM8ahxz5Gbf0f8xpdOB0S3Jx2gd7XT2_1M9m-bJr6cUsME_lICq6k0E5pc_TnnVA5cGFlpRS1pdTSiUrZgnXaFqWkuQDVaSelpUqAMIrzBVr-c00cUorg2q_oDzrOLaPtb5qWtac0_AdqB1X6</recordid><startdate>20030303</startdate><enddate>20030303</enddate><creator>Jasenek, A.</creator><creator>Rau, U.</creator><creator>Weinert, K.</creator><creator>Schock, H. W.</creator><creator>Werner, J. H.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20030303</creationdate><title>Illumination-induced recovery of Cu(In,Ga)Se2 solar cells after high-energy electron irradiation</title><author>Jasenek, A. ; Rau, U. ; Weinert, K. ; Schock, H. W. ; Werner, J. H.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c142t-63954af9ac1553b492e34d58990d75a5f489d61bad675024e9baf55d094e4c933</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2003</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Jasenek, A.</creatorcontrib><creatorcontrib>Rau, U.</creatorcontrib><creatorcontrib>Weinert, K.</creatorcontrib><creatorcontrib>Schock, H. W.</creatorcontrib><creatorcontrib>Werner, J. H.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Jasenek, A.</au><au>Rau, U.</au><au>Weinert, K.</au><au>Schock, H. W.</au><au>Werner, J. H.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Illumination-induced recovery of Cu(In,Ga)Se2 solar cells after high-energy electron irradiation</atitle><jtitle>Applied physics letters</jtitle><date>2003-03-03</date><risdate>2003</risdate><volume>82</volume><issue>9</issue><spage>1410</spage><epage>1412</epage><pages>1410-1412</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>Cu ( In , Ga ) Se 2 / CdS / ZnO solar cells irradiated with a 1 MeV electron fluence of 1018 cm−2 degrade to about 80% of their initial conversion efficiency. Illumination with white light at an intensity of 100 mW cm−2 for 3 h at room temperature restores more than 90% of the preirradiation efficiency. The healing process is more efficient if the device is kept under open-circuit conditions during illumination than for short-circuit conditions. Injecting minority carriers by voltage bias in the dark, instead of illumination, does not cause enduring device recovery. This behavior of Cu(In,Ga)Se2 is in contrast to illumination-induced defect healing processes reported for other semiconductor materials, like GaAs, InP, or GaP.</abstract><doi>10.1063/1.1559648</doi><tpages>3</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0003-6951
ispartof Applied physics letters, 2003-03, Vol.82 (9), p.1410-1412
issn 0003-6951
1077-3118
language eng
recordid cdi_crossref_primary_10_1063_1_1559648
source American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list); AIP Journals (American Institute of Physics)
title Illumination-induced recovery of Cu(In,Ga)Se2 solar cells after high-energy electron irradiation
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-06T18%3A18%3A17IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Illumination-induced%20recovery%20of%20Cu(In,Ga)Se2%20solar%20cells%20after%20high-energy%20electron%20irradiation&rft.jtitle=Applied%20physics%20letters&rft.au=Jasenek,%20A.&rft.date=2003-03-03&rft.volume=82&rft.issue=9&rft.spage=1410&rft.epage=1412&rft.pages=1410-1412&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.1559648&rft_dat=%3Ccrossref%3E10_1063_1_1559648%3C/crossref%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c142t-63954af9ac1553b492e34d58990d75a5f489d61bad675024e9baf55d094e4c933%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true