Loading…

High-speed solar-blind photodetectors with indium-tin-oxide Schottky contacts

We report AlGaN/GaN-based high-speed solar-blind photodetectors with indium-tin-oxide Schottky contacts. Current–voltage, spectral responsivity, and high-frequency response characterizations were performed on the fabricated Schottky photodiodes. Low dark currents of

Saved in:
Bibliographic Details
Published in:Applied physics letters 2003-04, Vol.82 (14), p.2344-2346
Main Authors: Biyikli, Necmi, Kimukin, Ibrahim, Kartaloglu, Tolga, Aytur, Orhan, Ozbay, Ekmel
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c262t-fb6ef39476c2b49e78cc5134131a853fcba45b8612b8c2a9726df5f53abd32833
cites cdi_FETCH-LOGICAL-c262t-fb6ef39476c2b49e78cc5134131a853fcba45b8612b8c2a9726df5f53abd32833
container_end_page 2346
container_issue 14
container_start_page 2344
container_title Applied physics letters
container_volume 82
creator Biyikli, Necmi
Kimukin, Ibrahim
Kartaloglu, Tolga
Aytur, Orhan
Ozbay, Ekmel
description We report AlGaN/GaN-based high-speed solar-blind photodetectors with indium-tin-oxide Schottky contacts. Current–voltage, spectral responsivity, and high-frequency response characterizations were performed on the fabricated Schottky photodiodes. Low dark currents of
doi_str_mv 10.1063/1.1566459
format article
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_1566459</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_1566459</sourcerecordid><originalsourceid>FETCH-LOGICAL-c262t-fb6ef39476c2b49e78cc5134131a853fcba45b8612b8c2a9726df5f53abd32833</originalsourceid><addsrcrecordid>eNotkLFOwzAURS0EEqEw8AdZGVz8_GInGVEFFKmIAZgj27GJIa0j2wj69w2i09W9OrrDIeQa2BKYxFtYgpCyEu0JKYDVNUWA5pQUjDGkshVwTi5S-pyr4IgFeV77j4Gmydq-TGFUkerR7_pyGkIOvc3W5BBT-ePzUM67_97S7Hc0_Prelq9mpvLXvjRhl5XJ6ZKcOTUme3XMBXl_uH9brenm5fFpdbehhkueqdPSOmyrWhquq9bWjTECsAIE1Qh0RqtK6EYC143hqq257J1wApXukTeIC3Lz_2tiSCla103Rb1Xcd8C6Pw8ddEcPeAAhzVB0</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>High-speed solar-blind photodetectors with indium-tin-oxide Schottky contacts</title><source>American Institute of Physics (AIP) Publications</source><source>American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)</source><creator>Biyikli, Necmi ; Kimukin, Ibrahim ; Kartaloglu, Tolga ; Aytur, Orhan ; Ozbay, Ekmel</creator><creatorcontrib>Biyikli, Necmi ; Kimukin, Ibrahim ; Kartaloglu, Tolga ; Aytur, Orhan ; Ozbay, Ekmel</creatorcontrib><description>We report AlGaN/GaN-based high-speed solar-blind photodetectors with indium-tin-oxide Schottky contacts. Current–voltage, spectral responsivity, and high-frequency response characterizations were performed on the fabricated Schottky photodiodes. Low dark currents of &lt;1 pA at 20 V reverse bias and breakdown voltages larger than 40 V were obtained. A maximum responsivity of 44 mA/W at 263 nm was measured, corresponding to an external quantum efficiency of 21%. True solar-blind detection was ensured with a cutoff wavelength of 274 nm. Time-based high-frequency measurements at 267 nm resulted in pulse responses with rise times and pulse-widths as short as 13 and 190 ps, respectively. The corresponding 3-dB bandwidth was calculated as 1.10 GHz.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.1566459</identifier><language>eng</language><ispartof>Applied physics letters, 2003-04, Vol.82 (14), p.2344-2346</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c262t-fb6ef39476c2b49e78cc5134131a853fcba45b8612b8c2a9726df5f53abd32833</citedby><cites>FETCH-LOGICAL-c262t-fb6ef39476c2b49e78cc5134131a853fcba45b8612b8c2a9726df5f53abd32833</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,782,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Biyikli, Necmi</creatorcontrib><creatorcontrib>Kimukin, Ibrahim</creatorcontrib><creatorcontrib>Kartaloglu, Tolga</creatorcontrib><creatorcontrib>Aytur, Orhan</creatorcontrib><creatorcontrib>Ozbay, Ekmel</creatorcontrib><title>High-speed solar-blind photodetectors with indium-tin-oxide Schottky contacts</title><title>Applied physics letters</title><description>We report AlGaN/GaN-based high-speed solar-blind photodetectors with indium-tin-oxide Schottky contacts. Current–voltage, spectral responsivity, and high-frequency response characterizations were performed on the fabricated Schottky photodiodes. Low dark currents of &lt;1 pA at 20 V reverse bias and breakdown voltages larger than 40 V were obtained. A maximum responsivity of 44 mA/W at 263 nm was measured, corresponding to an external quantum efficiency of 21%. True solar-blind detection was ensured with a cutoff wavelength of 274 nm. Time-based high-frequency measurements at 267 nm resulted in pulse responses with rise times and pulse-widths as short as 13 and 190 ps, respectively. The corresponding 3-dB bandwidth was calculated as 1.10 GHz.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2003</creationdate><recordtype>article</recordtype><recordid>eNotkLFOwzAURS0EEqEw8AdZGVz8_GInGVEFFKmIAZgj27GJIa0j2wj69w2i09W9OrrDIeQa2BKYxFtYgpCyEu0JKYDVNUWA5pQUjDGkshVwTi5S-pyr4IgFeV77j4Gmydq-TGFUkerR7_pyGkIOvc3W5BBT-ePzUM67_97S7Hc0_Prelq9mpvLXvjRhl5XJ6ZKcOTUme3XMBXl_uH9brenm5fFpdbehhkueqdPSOmyrWhquq9bWjTECsAIE1Qh0RqtK6EYC143hqq257J1wApXukTeIC3Lz_2tiSCla103Rb1Xcd8C6Pw8ddEcPeAAhzVB0</recordid><startdate>20030407</startdate><enddate>20030407</enddate><creator>Biyikli, Necmi</creator><creator>Kimukin, Ibrahim</creator><creator>Kartaloglu, Tolga</creator><creator>Aytur, Orhan</creator><creator>Ozbay, Ekmel</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20030407</creationdate><title>High-speed solar-blind photodetectors with indium-tin-oxide Schottky contacts</title><author>Biyikli, Necmi ; Kimukin, Ibrahim ; Kartaloglu, Tolga ; Aytur, Orhan ; Ozbay, Ekmel</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c262t-fb6ef39476c2b49e78cc5134131a853fcba45b8612b8c2a9726df5f53abd32833</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2003</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Biyikli, Necmi</creatorcontrib><creatorcontrib>Kimukin, Ibrahim</creatorcontrib><creatorcontrib>Kartaloglu, Tolga</creatorcontrib><creatorcontrib>Aytur, Orhan</creatorcontrib><creatorcontrib>Ozbay, Ekmel</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Biyikli, Necmi</au><au>Kimukin, Ibrahim</au><au>Kartaloglu, Tolga</au><au>Aytur, Orhan</au><au>Ozbay, Ekmel</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High-speed solar-blind photodetectors with indium-tin-oxide Schottky contacts</atitle><jtitle>Applied physics letters</jtitle><date>2003-04-07</date><risdate>2003</risdate><volume>82</volume><issue>14</issue><spage>2344</spage><epage>2346</epage><pages>2344-2346</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>We report AlGaN/GaN-based high-speed solar-blind photodetectors with indium-tin-oxide Schottky contacts. Current–voltage, spectral responsivity, and high-frequency response characterizations were performed on the fabricated Schottky photodiodes. Low dark currents of &lt;1 pA at 20 V reverse bias and breakdown voltages larger than 40 V were obtained. A maximum responsivity of 44 mA/W at 263 nm was measured, corresponding to an external quantum efficiency of 21%. True solar-blind detection was ensured with a cutoff wavelength of 274 nm. Time-based high-frequency measurements at 267 nm resulted in pulse responses with rise times and pulse-widths as short as 13 and 190 ps, respectively. The corresponding 3-dB bandwidth was calculated as 1.10 GHz.</abstract><doi>10.1063/1.1566459</doi><tpages>3</tpages><oa>free_for_read</oa></addata></record>
fulltext fulltext
identifier ISSN: 0003-6951
ispartof Applied physics letters, 2003-04, Vol.82 (14), p.2344-2346
issn 0003-6951
1077-3118
language eng
recordid cdi_crossref_primary_10_1063_1_1566459
source American Institute of Physics (AIP) Publications; American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)
title High-speed solar-blind photodetectors with indium-tin-oxide Schottky contacts
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-06T17%3A55%3A16IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=High-speed%20solar-blind%20photodetectors%20with%20indium-tin-oxide%20Schottky%20contacts&rft.jtitle=Applied%20physics%20letters&rft.au=Biyikli,%20Necmi&rft.date=2003-04-07&rft.volume=82&rft.issue=14&rft.spage=2344&rft.epage=2346&rft.pages=2344-2346&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.1566459&rft_dat=%3Ccrossref%3E10_1063_1_1566459%3C/crossref%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c262t-fb6ef39476c2b49e78cc5134131a853fcba45b8612b8c2a9726df5f53abd32833%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true