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High-speed solar-blind photodetectors with indium-tin-oxide Schottky contacts
We report AlGaN/GaN-based high-speed solar-blind photodetectors with indium-tin-oxide Schottky contacts. Current–voltage, spectral responsivity, and high-frequency response characterizations were performed on the fabricated Schottky photodiodes. Low dark currents of
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Published in: | Applied physics letters 2003-04, Vol.82 (14), p.2344-2346 |
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Language: | English |
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container_issue | 14 |
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container_title | Applied physics letters |
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creator | Biyikli, Necmi Kimukin, Ibrahim Kartaloglu, Tolga Aytur, Orhan Ozbay, Ekmel |
description | We report AlGaN/GaN-based high-speed solar-blind photodetectors with indium-tin-oxide Schottky contacts. Current–voltage, spectral responsivity, and high-frequency response characterizations were performed on the fabricated Schottky photodiodes. Low dark currents of |
doi_str_mv | 10.1063/1.1566459 |
format | article |
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Current–voltage, spectral responsivity, and high-frequency response characterizations were performed on the fabricated Schottky photodiodes. Low dark currents of <1 pA at 20 V reverse bias and breakdown voltages larger than 40 V were obtained. A maximum responsivity of 44 mA/W at 263 nm was measured, corresponding to an external quantum efficiency of 21%. True solar-blind detection was ensured with a cutoff wavelength of 274 nm. Time-based high-frequency measurements at 267 nm resulted in pulse responses with rise times and pulse-widths as short as 13 and 190 ps, respectively. 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Current–voltage, spectral responsivity, and high-frequency response characterizations were performed on the fabricated Schottky photodiodes. Low dark currents of <1 pA at 20 V reverse bias and breakdown voltages larger than 40 V were obtained. A maximum responsivity of 44 mA/W at 263 nm was measured, corresponding to an external quantum efficiency of 21%. True solar-blind detection was ensured with a cutoff wavelength of 274 nm. Time-based high-frequency measurements at 267 nm resulted in pulse responses with rise times and pulse-widths as short as 13 and 190 ps, respectively. 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Current–voltage, spectral responsivity, and high-frequency response characterizations were performed on the fabricated Schottky photodiodes. Low dark currents of <1 pA at 20 V reverse bias and breakdown voltages larger than 40 V were obtained. A maximum responsivity of 44 mA/W at 263 nm was measured, corresponding to an external quantum efficiency of 21%. True solar-blind detection was ensured with a cutoff wavelength of 274 nm. Time-based high-frequency measurements at 267 nm resulted in pulse responses with rise times and pulse-widths as short as 13 and 190 ps, respectively. The corresponding 3-dB bandwidth was calculated as 1.10 GHz.</abstract><doi>10.1063/1.1566459</doi><tpages>3</tpages><oa>free_for_read</oa></addata></record> |
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title | High-speed solar-blind photodetectors with indium-tin-oxide Schottky contacts |
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